价 格: | 面议 | |
品牌/商标: | 长电 | |
型号/规格: | D882 | |
应用范围: | 功率 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
击穿电压VCBO: | 40(V) | |
集电极允许电流ICM: | 3(A) | |
集电极耗散功率PCM: | 1.25(W) | |
截止频率fT: | 90(MHz) | |
结构: | 点接触型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
D882 TRANSISTOR (NPN)
FEATURES
Power dissipation
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 1.25 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V
Collector cut-off current ICBO VCB= 40 V, IE=0 1 μA
Collector cut-off current ICEO VCE= 30 V, IB=0 10 μA
Emitter cut-off current IEBO VEB= 6 V, IC=0 1 μA
DC current gain hFE VCE= 2 V, IC= 1A 60 400
Collector-emitter saturation voltage VCE (sat) IC= 2A, IB= 0.2 A 0.5 V
Base-emitter saturation voltage VBE (sat) IC= 2A, IB= 0.2 A 1.5 V
Transition frequency fT
VCE= 5V, IC=0.1A
f =10MHz
90 MHz
CLASSIFICATION OF hFE
Rank R O Y GR
Range 60-120 100-200 160-320 200-400
Cross ReferenceIR Part #RecommendedIR Part #DescriptionPartStatusReplacementTypeIRFR5505PBFIRFR5505PBFMOSFET, P-CHANNEL, -55V, -18A, 110 mOhm, 21.3 nC Qg, D-PakActiveDIRECTSpecificationsParameterValuePackage D-PakCircuit DiscreteVBRDSS (V) -55VGs Max (V) 20RDS(on) Max 10V (mOhms) 110.0ID @ TC = 25C (A) -18ID @ TC = 100C (A) -11Qg Typ (nC) 21.3Qgd Typ (nC) 10.0Rth(JC) (C/W) 2.2Power Dissipation @ TC = 25C (W) 57Part Status ActiveEnvironmental Options Available PbF and LeadedPackage Class Can Surface Mount with Leads
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