无锡固电ISC供应2SD2000晶体管,三极管,功率管
| 价 格： | 1.80 | |
| 是否提供加工定制： | 是 | |
| 品牌/商标： | ISC | |
| 型号/规格： | 2SD2000 | |
| 应用范围： | 功率 | |
| 材料： | 硅(Si) | |
| 极性： | NPN型 | |
| 结构： | 平面型 | |
| 封装形式： | 直插型 | |
| 封装材料： | 塑料封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.)
·High Speed Switching
·Good Linearity of hFE
·High Collector Power Dissipation
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 80 | V |
VCEO | Collector-Emitter Voltage | 60 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current-Continuous | 4 | A |
IB | Base Current- Continuous | 1 | A |
PC | Collector Power Dissipation @ Ta=25℃ | 2 | W |
Collector Power Dissipation @ TC=25℃ | 35 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 25mA; IB= 0 | 60 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 4A; IB= 0.4A |
|
| 1.5 | V |
VBE(on) | Base-Emitter On Voltage | IC= 4A; VCE= 4V |
|
| 2.0 | V |
ICBO | Collector Cutoff Current | VCB= 80V; IE= 0 |
|
| 100 | μA |
IEBO | Emitter Cutoff Current | VEB= 6V; IC= 0 |
|
| 100 | μA |
hFE-1 | DC Current Gain | IC= 1A; VCE= 4V | 70 |
| 250 |
|
hFE-2 | DC Current Gain | IC= 4A; VCE= 4V | 20 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 0.2A; VCE= 12V; f= 10MHz |
| 80 |
| MHz |
Switching Times | ||||||
ton | Turn-on Time | VCC=50V, IC= 4A; IB1= -IB2= 0.4A |
| 0.3 |
| μs |
tstg | Storage Time |
| 1.0 |
| μs | |
tf | Fall Time |
| 0.2 |
| μs | |
u hFE-1Classifications
Q | P |
70-150 | 120-250 |
- 所属城市：江苏 无锡
- [联系时请说明来自维库仪器仪表网]
- 联系人： 王燕
- 电话：0510-85346980
- 传真：0510-85346750
- 手机：15961889150
- QQ ：
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