价 格: | 面议 | |
型号/规格: | RJK0348DPA,QFN-8 5*6/WPAK,SMD/MOS,N场,30V,50A,0.0025Ω | |
品牌/商标: | RENESAS(瑞萨) | |
封装形式: | QFN-8 5*6/WPAK | |
环保类别: | 无铅环保型 | |
安装方式: | 贴片式 | |
包装方式: | 2500/盘 |
产品型号:RJK0349DPA
特点
* 高速开关
* 可4.5 V栅极驱动器
* 低驱动电流
* 高密度安装
* 低导通电阻RDS(ON)= 2.4mΩ TYP.(VGS=10V)
* 无铅
封装:QFN-8 5*6/WPAK
源漏极间雪崩电压V(br)dss(V):30
夹断电压VGS(V):±20
漏极电流Id(A):45
源漏极导通电阻rDS(on)(Ω):0.0031 @VGS = 10 V
开启电压VGS(TH)(V):2.5
功率PD(W):50
输入电容Ciss(PF):3850 typ.
通道极性:N沟道
低频跨导gFS(s):110
单脉冲雪崩能量EAR(mJ):62.5
导通延迟时间Td(on)(ns):11 typ.
上升时间Tr(ns):6.5 typ.
关断延迟时间Td(off)(ns):58 typ.
下降时间Tf(ns):9.8 typ.
温度(℃): -55 ~150
描述:30V,45A N-沟道增强型场效应晶体管
(产品图片,产品参数,产品PDF等产品相关信息在线了解\查询\.)
产品型号:RJK0358DPA 特点 * 高速开关 * 可5V栅极驱动器 * 低驱动电流 * 高密度安装 * 低导通电阻RDS(ON)= 2.6mΩ TYP.(VGS=10V) 封装:QFN-8 5*6/WPAK 源漏极间雪崩电压V(br)dss(V):30 夹断电压VGS(V):±20 漏极电流Id(A):38 源漏极导通电阻rDS(on)(Ω):0.0034 @VGS = 10 V 开启电压VGS(TH)(V):2.5 功率PD(W):45 输入电容Ciss(PF):4300 typ. 通道极性:N沟道 低频跨导gFS(s):50 单脉冲雪崩能量EAR(mJ):36.1 导通延迟时间Td(on)(ns):11 typ. 上升时间Tr(ns):5.8 typ. 关断延迟时间Td(off)(ns):68 typ. 下降时间Tf(ns):12 typ. 温度(℃): -55 ~150 描述:30V,38A N-沟道增强型场效应晶体管 (产品图片,产品参数,产品PDF等产品相关信息在线了解\查询\下载.)
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