价 格: | 4.30 | |
品牌/商标: | IR/国际整流器 | |
型号/规格: | IRF4410ZPBF | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | L/功率放大 | |
材料: | N-FET硅N沟道 | |
开启电压: | na(V) | |
夹断电压: | na(V) | |
跨导: | na(μS) | |
极间电容: | na(pF) | |
低频噪声系数: | na(dB) | |
漏极电流: | na(mA) | |
耗散功率: | na(mW) |
Parameter | Value |
Package | TO-220AB |
Circuit | Discrete |
VBRDSS (V) | 100 |
VGs Max (V) | 20 |
RDS(on) Max 10V (mOhms) | 9.0 |
ID @ TC = 25C (A) | 97 |
ID @ TC = 100C (A) | 69 |
Qg Typ (nC) | 83.0 |
Qgd Typ (nC) | 27.0 |
Rth(JC) (K/W) | 0.65 |
Power Dissipation @ TC = 25C (W) | 230 |
Part Status | Active & Preferred |
Environmental Options Available | PbF |
Package Class Can | Thru-Hole |
SpecificationsParameterValuePackage D-PakCircuit DiscreteVBRDSS (V) 55VGs Max (V) 16RDS(on) Max 4.5V (mOhms) 210.0RDS(on) Max 10V (mOhms) 140.0ID @ TC = 25C (A) 10ID @ TC = 100C (A) 7.1Qg Typ (nC) 5.3Qgd Typ (nC) 2.9Rth(JC) (K/W) 5.3Power Dissipation @ TC = 25C (W) 28Part Status ActiveEnvironmental Options Available PbF and LeadedPackage Class Can Surface Mount with Leads
Product DetailBackPart Num:IXFK360N10TDescription:POWER DEVICES > DISCRETEMOSFETs > N-Channel: Trench Gate Power MOSFETs > TrenchHiperFETsConfiguration:SinglePackage Style: TO-264Status:Active PartSupport Docs:DataSheet RecommendedAlternativesCompetingPartsParameter