供应双向可控硅BT137X-600E
| 价 格： | 面议 | |
| 品牌/商标： | PHILIPS/飞利浦 | |
| 型号/规格： | BT137X-600E | |
| 控制方式： | 双向 | |
| 极数： | 三极 | |
| 封装材料： | 塑料封装 | |
| 封装外形： | SOT-252 | |
| 关断速度： | 普通 | |
| 散热功能： | 带散热片 | |
| 频率特性： | 低频 | |
| 功率特性： | 小功率 | |
| 额定正向平均电流： | 8（A） | |
| 控制极触发电流： | 10-15（mA） | |
| 反向重复峰值电压： | 600（V） |
四象限双向可控硅 欢迎来电查询.
Glass
passivated,
sensitive
gate
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
triacs in a plastic envelope suitable forsurface mounting, intended for use in
500E
600E
general
purpose
bidirectional
V
DRM
Repetitive peak off-state
500
600
V
switching
and
phase
control
I
T(RMS)
voltages
4
4
A
applications.
These
devices
are
I
TSM
RMS on-state current
25
25
A
intended to be interfaced directly to
Non-repetitive peak on-state current
microcontrollers,
logic
integrated
circuits and other low power gate triggercircuits
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 莫建群
- 电话：755-33060028
- 传真：755-33060028
- 手机：
- QQ ：
供应双向可控硅BT137X-800E
信息内容：四象限双向可控硅 欢迎来电查询. Limiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT-500-600VDRMRepetitive peak off-state-50016001VvoltagesIT(RMS)RMS on-state currentfull sine wave; Tmb≤ 107 C-4AITSMNon-repetitive peakfull sine wave; Tj= 25 C prior toon-state currentsurget = 20 ms-25At = 16.7 ms-27AI2tI2t for fusingt = 10 ms-3.1A2sdIT/dtRepetitive rate of rise ofITM= 6 A; IG= 0.2 A;on-state current afterdIG/dt = 0.2 A/μstriggeringT2 G -50A/μsT2 G--50A/μsT2- G--50A/μsT2- G -10A/μsIGMPeak gate current-2AVGMPeak gate voltage-5VPGMPeak gate power-5WPG(AV)Average gate powerover any 20 ms period-0.5WTstgStorage temperature-40150CTjOperating junction-125Ctemperature123tabT1T2G1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac"
供应单向可控硅BT169D
信息内容：厂家直销,大量现货.详情可致电0755-33060028莫生联系。 BT169D /G SeriesMAIN FEATURESSymbol Value UnitIT(RMS) 0.8 AVDRM / VRRM 400 to 600 VIGT 10 to 120 μA
