| 价 格: | 面议 | |
| 品牌/商标: | ST/意法 | |
| 型号/规格: | STD10NM65N | |
| 种类: | 绝缘栅(MOSFET) | |
| 沟道类型: | N沟道 | |
| 导电方式: | 增强型 | |
| 用途: | S/开关 | |
| 封装外形: | SMD(SO)/表面封装 | |
| 开启电压: | 4(V) | |
| 跨导: | 7500(μS) | |
| 极间电容: | 850(pF) | |
| 漏极电流: | 9000(mA) | |
| 耗散功率: | 90000(mW) |
• VDS=710V
• ID=9A
• 导通电阻:R<0.48Ω
• 总耗散功率:90W
• 工作温度范围:-55 ~ 150°C
600V N-Channel MOSFETFeatures•rDS(on) = 4.7Ω @ VGS = 10 V•Low gate charge (typical 8.5 nC)•Low Crss (typical 4.3 pF)•Fast switching•100% avalanche tested•Improved dv/dt capability
Single N-channel Trench MOSFET 30V, 48.0A, 8.5mΩ •工作温度:-40 ~ 85 °C •封装类型:TO-252 "