原装仙童场效应管 FQP4N90C
| 价 格： | 0.10 | |
| 品牌/商标： | FAIRCHILD/仙童 | |
| 型号/规格： | FQP4N90C | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 | |
| 用途： | L/功率放大 | |
| 材料： | N-FET硅N沟道 |
Features N
9
These N-Channel enhancement mode power field effect • 4A, 900V, RDS(on) = 4.2? @VGS = 10 V 0
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 17nC) C
planar stripe, DMOS technology. • Low Crss ( typical 5.6 pF)
This advanced technology has been especially tailored to • Fast switching
minimize on-state resistance, provide superior switching • 100% avalanche tested
performance, and withstand high energy pulse in the • Improved dv/dt capability
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
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信息内容：FQA24N50 500V N-Channel MOSFET24A,500V,RDS(ON)=0.2欧姆在VGS=10Vdzsc/18/8788/18878804.jpg
台湾友顺UTC一级代理供应9A/900V之MOS管 9N90
信息内容：9A, 900V N-CHANNEL POWER MOSFET DESCRIPTIONThe UTC 9N90 uses UTC’s advanced proprietary, planarstripe, DMOS technology to provide excellent RDS(ON), low gatecharge and operation with low gate voltages. This device is suitablefor use as a load switch or in PWM applications. FEATURES* RDS(ON) = 1.4Ω @VGS = 10 V* Ultra Low Gate Charge ( Typical 45 nC )* Low Reverse Transfer Capacitance ( CRSS = Typical 14 pF )* Fast Switching Capability* Avalanche Energy Specified* Improved dv/dt Capability, High Ruggedness"
