价 格: | 5.90 | |
品牌/商标: | ST/意法 | |
型号/规格: | BTA41-600B | |
应用范围: | 开关 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
击穿电压VCBO: | 600(V) | |
集电极允许电流ICM: | 41(A) | |
集电极耗散功率PCM: | 1(W) | |
截止频率fT: | 1(MHz) | |
结构: | 扩散型 | |
封装形式: | TO-3P | |
封装材料: | 塑料封装 | |
控制方式: | 其他 |
dzsc/18/8781/18878179.jpg
型号: BTA41-600B
规格:TO-3P/TO-247
备注:全新
双向大功率可控硅
全新原装IGBT 13A 600V 90W N沟 INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures• Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10µs Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristics.• Positive VCE (on) Temperature Coefficient.• Lead-FreeBenefits• Benchmark Efficiency for Motor Control.• Rugged Transient Performance.• Low EMI.• Excellent Current Sharing in Parallel Operation.
全新原装进口FUJI品牌.2SK3679-01MR TO-22F 900V/1.58?/9A the express written consent of Fuji Electric Co.,Ltd.Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY1) Package TO-220F2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)Items UnitsDrain-Source Voltage VContinuous Drain CurrentAPulsed Drain Current AGate-Source Voltage VAmJ*1Maximum Drain-Source dV/dtdVDS/dtkV/usPeak Diode recovery dV/dtdV/dtkV/us *2WWOperating and Storage ℃Temperature range ℃3)Electrical Characteristics (Tch=25℃ unless otherwise specified)ItemsSymbolsTest Conditionsmin.typ.max.UnitsDrain-Source Breakdown Voltage BVDSS ID=250uAVGS=0V 900------VGate Threshold Voltage VGS(th)ID=250uAVDS=VGS 3.0---5.0VVDS=900VTch=25℃ ------25 μAVGS=0VTch=125℃ ------250 μAGate-Source Leakage Current IGSS VGS=±30VVDS=0V ------100nAInput Capacitance Ciss VDS=25V ---1200---Output Capacitance Coss VGS=0V ---140---pFReverse Transfer Capacitance Crss f=1MHz---7---Total Gate ChargeQ...