价 格: | 3.99 | |
品牌: | IR/国际整流器 | |
型号: | IRGB6B60KD | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | HI-REL/高可靠性 | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | GaAS-FET砷化镓 | |
开启电压: | 1(V) | |
夹断电压: | 600(V) | |
低频跨导: | 1(μS) | |
极间电容: | 1(pF) | |
低频噪声系数: | 1(dB) | |
漏极电流: | 13000(mA) | |
耗散功率: | 90000(mW) |
全新原装IGBT 13A 600V 90W N沟
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
全新原装进口FUJI品牌.2SK3679-01MR TO-22F 900V/1.58?/9A the express written consent of Fuji Electric Co.,Ltd.Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY1) Package TO-220F2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)Items UnitsDrain-Source Voltage VContinuous Drain CurrentAPulsed Drain Current AGate-Source Voltage VAmJ*1Maximum Drain-Source dV/dtdVDS/dtkV/usPeak Diode recovery dV/dtdV/dtkV/us *2WWOperating and Storage ℃Temperature range ℃3)Electrical Characteristics (Tch=25℃ unless otherwise specified)ItemsSymbolsTest Conditionsmin.typ.max.UnitsDrain-Source Breakdown Voltage BVDSS ID=250uAVGS=0V 900------VGate Threshold Voltage VGS(th)ID=250uAVDS=VGS 3.0---5.0VVDS=900VTch=25℃ ------25 μAVGS=0VTch=125℃ ------250 μAGate-Source Leakage Current IGSS VGS=±30VVDS=0V ------100nAInput Capacitance Ciss VDS=25V ---1200---Output Capacitance Coss VGS=0V ---140---pFReverse Transfer Capacitance Crss f=1MHz---7---Total Gate ChargeQ...
dzsc/18/8795/18879557.jpg2SK3878 TO-247 9A 900V东芝TOSHIBA 原装进口兼容FQA9N90C 2Kpcs/盒