场效应管 TK8A55DA,K8A55DA
| 价 格： | 面议 | |
| 封装外形： | P-DIT/塑料双列直插 | |
| 型号/规格： | TK8A55DA,TO-220F,DIP/MOS,N场,550V,7.5A,1.07Ω | |
| 材料： | N-FET硅N沟道 | |
| 品牌/商标： | TOSHIBA/东芝 | |
| 沟道类型： | N沟道 | |
| 种类： | 绝缘栅(MOSFET) | |
| 导电方式： | 增强型 |
产品型号:TK8A55DA
封装:TO-220F
源漏极间雪崩电压V(br)dss(V):550
夹断电压VGS(V):±30
漏极电流Id(A):7.5
源漏极导通电阻rDS(on)(Ω):1.07 @VGS = 10 V
开启电压VGS(TH)(V):4
功率PD(W):40
极间电容Ciss(PF):800
通道极性:N沟道
低频跨导gFS(s)：3
单脉冲雪崩能量EAS(mJ):163
温度(℃): -55 ~150
描述:550V,7.5A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS Ⅶ)
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