价 格: | 1.50 | |
品牌: | IR/国际整流器 | |
型号: | IRF830PBF | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | L/功率放大 | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | N-FET硅N沟道 | |
开启电压: | 20(V) | |
夹断电压: | 20(V) | |
跨导: | 5(μS) | |
极间电容: | 20(pF) | |
低频噪声系数: | 20(dB) | |
漏极电流: | 50(mA) | |
耗散功率: | 50(mW) |
IRF840 IRF3205 |
IRF830 IRF3710 |
IRF740 |
IRF840A IRFZ48N |
IRF540N IR1150 |
IR2153S IRFZ44N |
IR2111 |
IRS2453 IR2520D |
30BQ015 IR2153 |
20BQ030 IRF3415S |
大量IRF840PBF 优惠价格供应,原装,假一罚十。500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)PARAMETER SYMBOL LIMIT UNITDrain-Source Voltage VDS 500 VGate-Source Voltage VGS ± 20 VContinuous Drain Current VGS at 10 VTC = 25 °CID8.0TC = 100 °C 5.1 APulsed Drain Currenta IDM 32Linear Derating Factor 1.0 W/°CSingle Pulse Avalanche Energyb EAS 510 mJRepetitive Avalanche Currenta IAR 8.0 ARepetitive Avalanche Energya EAR 13 mJMaximum Power Dissipation TC = 25 °C PD 125 WPeak Diode Recovery dV/dtc dV/dt 3.5 V/nsOperating Junction and Storage Temperature Range TJ, Tstg - 55 to 150°CSoldering Recommendations (Peak Temperature) for 10 s 300d
大量IRF3205PBF 优惠价格供应 ParameterValuePackage TO-220AB Polarity N VBRDSS (V) 55 RDS(on) 10V (mOhms) 8.0 ID TC = 25C (A) 98 ID TC = 100C (A) 69 Qg Typ 97.3 Qgd Typ 36.0 Rth(JC) 1.00 Power TC = 25C (W) 150