价 格: | 1.50 | |
品牌: | IR/国际整流器 | |
型号: | IRF840PBF | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 耗尽型 | |
用途: | L/功率放大 | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | N-FET硅N沟道 | |
开启电压: | 20(V) | |
夹断电压: | 20(V) | |
跨导: | 1(μS) | |
极间电容: | 1(pF) | |
低频噪声系数: | 11(dB) | |
漏极电流: | 1(mA) | |
耗散功率: | 50(mW) |
大量IRF840PBF 优惠价格供应,原装,假一罚十。
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ± 20 V
Continuous Drain Current VGS at 10 V
TC = 25 °C
ID
8.0
TC = 100 °C 5.1 A
Pulsed Drain Currenta IDM 32
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energyb EAS 510 mJ
Repetitive Avalanche Currenta IAR 8.0 A
Repetitive Avalanche Energya EAR 13 mJ
Maximum Power Dissipation TC = 25 °C PD 125 W
Peak Diode Recovery dV/dtc dV/dt 3.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
大量IRF3205PBF 优惠价格供应 ParameterValuePackage TO-220AB Polarity N VBRDSS (V) 55 RDS(on) 10V (mOhms) 8.0 ID TC = 25C (A) 98 ID TC = 100C (A) 69 Qg Typ 97.3 Qgd Typ 36.0 Rth(JC) 1.00 Power TC = 25C (W) 150
1200V30.000ATO-247SpecificationsParameterValuePackage TO-247Circuit Co-PackSwitching HardSwitching Speed ULTRAFAST 8-30 kHzVCES (V) 1200VCE(ON) (V) 3.50IC @ 25C (A) 30IC @ 100C (A) 15PD @25C (W) 160Environmental Options PbF