价 格: | 1.80 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SD2012 | |
应用范围: | 功率 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·High DC Current Gain-
: hFE= 100 (Min)@ IC= 0.5A
·Low Saturation Voltage-
: VCE(sat)= 1.0V (Max)
·High Power Dissipation
: PC= 25 W(Max)@ TC= 25℃
APPLICATIONS
·Designed for audio frequency power amplifier
applications
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 60 | V |
VCEO | Collector-Emitter Voltage | 60 | V |
VEBO | Emitter-Base Voltage | 7 | V |
IC | Collector Current-Continuous | 3 | A |
IB | Base Current-Continuous | 0.5 | A |
PC | Collector Power Dissipation @ Ta=25℃ | 2.0 | W |
Collector Power Dissipation @ TC=25℃ | 25 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 50mA ; IB= 0 | 60 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 2A; IB= 0.2A |
|
| 1.0 | V |
VBE(on) | Base-Emitter On Voltage | IC= 0.5A ; VCE= 5V |
|
| 1.0 | V |
ICBO | Collector Cutoff Current | VCB= 60V ; IE=0 |
|
| 0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= 7V ; IC=0 |
|
| 0.1 | mA |
hFE-1 | DC Current Gain | IC= 0.5A ; VCE= 5V | 100 |
| 320 |
|
hFE-2 | DC Current Gain | IC= 2A ; VCE= 5V | 20 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 0.5A ; VCE= 5V |
| 3 |
| MHz |
COB | Output Capacitance | IE= 0 ; VCB= 10V; ftest= 1.0MHz |
| 35 |
| pF |
DESCRIPTION Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min)·Static Drain-Source On-Resistance : RDS(on)= 0.18Ω(Max)·Fast Switching Speed·Low DriveRequirement APPLICATIONS ·Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. SYMBOLARAMETERVALUEUNITVDSSDrain-Source Voltage (VGS=0)200VVGSGate-Source Voltage±20VIDDrain Current-continuous@ TC=25℃18APtotTotal Dissipation@TC=25℃125WTjMax. Operating Junction Temperature150℃TstgStorageTemperature Range-55~150℃ Electrical Characteristics (Tc=25℃)SYMBOLPARAMETERCONDITIONSMINMAXUNITV(BR)DSSDrain-Source Breakdown VoltageVGS= 0; ID= 0.25mA200 VVGS(th)Gate Threshold VoltageVDS= VGS; ID= 0.25mA24VRDS(on)Drain-Source On-stage ResistanceVG...
DESCRIPTION ·High Breakdown Voltage- : VCBO= 1400V (Min)·High Switching Speed·Low Saturation Voltage APPLICATIONS·Color TV horizontal output applications.·Switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 1400VVCEOCollector-Emitter Voltage 600VVEBOEmitter-Base Voltage5VICCollector Current- Continuous10AIBBase Current- Continuous5APCCollector Power Dissipation@ TC=25℃50WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃"