价 格: | 面议 | |
品牌/商标: | IR/国际整流器 | |
型号/规格: | IRFB4229PBF | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | V-FET/V型槽MOS | |
封装外形: | CER-DIP/陶瓷直插 | |
开启电压: | 5(V) | |
跨导: | 83000(μS) | |
极间电容: | 4560(pF) | |
漏极电流: | 46000(mA) | |
耗散功率: | 330000(mW) |
•导通电阻:RDS(on) = 0.046Ω
•封装形式:TO-220ABMDF11N60N-Channel MOSFET 600V, 11A, 0.55Ω Brand: MagnaChipParts: MDF11N60THPackage: TO-220FFeatures:11A, 600V, RDS(on)≤0.55W@VGS= 10V结温范围:-55 ~ 150°C耗散功率:49W Applications:Power supply, PFC, High current and High Speed Switching广泛应用于电动车,电源工具,汽车调压器 HID灯 金卤灯 LED灯 开关电源 锂电池保护"
•导通电阻:RDS(on) = 0.04Ω •封装形式:TO-220AB