价 格: | 2.60 | |
品牌/商标: | MagnaChip(美格纳半导体) | |
型号/规格: | MDF11N60TH | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | N-FET硅N沟道 | |
开启电压: | 5(V) | |
跨导: | 13000(μS) | |
极间电容: | 1700(pF) | |
漏极电流: | 11000(mA) | |
耗散功率: | 49000(mW) |
MDF11N60
N-Channel MOSFET 600V, 11A, 0.55Ω
Brand: MagnaChip
Parts: MDF11N60TH
Package: TO-220F
Features:
11A, 600V, RDS(on)≤0.55W@VGS= 10V
结温范围:-55 ~ 150°C
耗散功率:49W
Applications:
Power supply, PFC, High current and High Speed Switching
广泛应用于电动车,电源工具,汽车调压器 HID灯 金卤灯 LED灯 开关电源 锂电池保护
"•导通电阻:RDS(on) = 0.04Ω •封装形式:TO-220AB
• VDS = 500V• ID = 4.4A @ VGS = 10V• RDS(ON) ≤ 1.4Ω @ VGS = 10V • 工作温度范围:-55 ~ 150°C