价 格: | 面议 | |
品牌: | FAIRCHILD/仙童 | |
型号: | SGH30N60RUFDTU | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | NF/音频(低频) | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | ALGaAS铝镓砷 | |
开启电压: | 1(V) | |
夹断电压: | 1(V) | |
跨导: | 1(μS) | |
极间电容: | 1(pF) | |
低频噪声系数: | 1(dB) | |
漏极电流: | 1(mA) | |
耗散功率: | 1(mW) |
仙童 MOS IGBT 场效应管
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原装,现货热卖 制造商:Fairchild Semiconductor产品种类:功率驱动器ICRoHS:dzsc/18/8743/18874393.jpg 详细信息 类型:High Side/Low Side上升时间:100 ns下降时间:80 ns电源电压-最小:13 V电源电流:1.3 mA功率耗散:1000 mW工作温度: 125 C安装风格:SMD/SMT封装:Reel配置:Non-Inverting 最小工作温度:- 40 C 激励器数量:2 输出端数量:2 工厂包装数量:3000
FSC 仙童代理Manufacturer:Fairchild Semiconductor Product Category:MOSFETs RoHS:dzsc/18/8745/18874527.jpg Details Product:General Purpose MOSFETs Configuration:Single Package / Case:TO-3P Transistor Polarity:N-Channel Drain-Source Breakdown Voltage:100 V Continuous Drain Current:43 A Power Dissipation:193000 mW Forward Transconductance gFS (Max / Min):10 S Resistance Drain-Source RDS (on):0.04 Ohm @ 10 V Typical Fall Time:45 ns Typical Rise Time:20 ns Typical Turn-Off Delay Time:80 ns Packaging:TUBE Gate-Source Breakdown Voltage: /- 20 V Maximum Operating Temperature:175 C Minimum Operating Temperature:- 55 C Type:MOSFET