价 格: | 面议 | |
封装外形: | CER-DIP/陶瓷直插 | |
型号/规格: | BAS31 | |
材料: | ALGaAS铝镓砷 | |
用途: | NF/音频(低频) | |
品牌/商标: | FAIRCHILD/仙童 | |
沟道类型: | N沟道 | |
种类: | 绝缘栅(MOSFET) | |
导电方式: | 增强型 |
原装,现货热卖
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仙童 MOS IGBT 场效应管Manufacturer:Fairchild Semiconductor Product Category:IGBT Transistors RoHS:dzsc/18/8742/18874292.jpg Details Package / Case:TO-3P Collector- Emitter Voltage VCEO Max:600 V Collector-Emitter Breakdown Voltage:600 V Collector-Emitter Saturation Voltage:2.2 V Maximum Gate Emitter Voltage:20 V Continuous Collector Current Ic Max:48 A Gate-Emitter Leakage Current: /- 100 nA Power Dissipation:235 W Packaging:Tube Configuration:Single"
原装,现货热卖 制造商:Fairchild Semiconductor产品种类:功率驱动器ICRoHS:dzsc/18/8743/18874393.jpg 详细信息 类型:High Side/Low Side上升时间:100 ns下降时间:80 ns电源电压-最小:13 V电源电流:1.3 mA功率耗散:1000 mW工作温度: 125 C安装风格:SMD/SMT封装:Reel配置:Non-Inverting 最小工作温度:- 40 C 激励器数量:2 输出端数量:2 工厂包装数量:3000