价 格: | 面议 | |
品牌/商标: | MagnaChip(美格纳半导体) | |
型号/规格: | MDF4N60BTH | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
封装外形: | CER-DIP/陶瓷直插 | |
开启电压: | 4(V) | |
跨导: | 4000(μS) | |
极间电容: | 505(pF) | |
漏极电流: | 4600(mA) | |
耗散功率: | 34700(mW) |
•封装类型:TO-220F
•VDS=600V
•ID= 4.6A @ VGS = 10V
•RDS(ON)≤ 2.0Ω @ VGS = 10V
•耗散功率:34.7W
•工作温度范围:-55 ~ 150°C
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导通电阻:0.21Ωdzsc/18/8705/18870528.jpgMOSFET N-CH 500V 20ATOSHIBA Field Effect Transistor Silicon N-Channel MOS
Single N-channel Trench MOSFET 30V, 57.0A, 6.6mΩFeatures• VDS = 30V• ID = 57.0A @VGS = 10V• RDS(ON)< 6.6mΩ @VGS = 10V< 9.0mΩ @VGS = 4.5V•封装形式:TO-252•结温范围:-55 ~ 175°C