三极管9014，TO-92
| 价 格： | 0.04 | |
| 品牌/商标： | 国产 | |
| 型号/规格： | S9014 | |
| 应用范围： | 放大 | |
| 功率特性： | 小功率 | |
| 频率特性： | 低频 | |
| 极性： | NPN型 | |
| 结构： | 点接触型 | |
| 材料： | 硅(Si) | |
| 封装形式： | 直插型 | |
| 封装材料： | 塑料封装 | |
| 营销方式： | 厂家直销 | |
| 产品性质： | 热销 |
厂家直销，长期大量供应三极管S9014，To-92，欢迎来电咨询。
dzsc/18/8669/18866942.jpg
ELECTRICAL CHARACTERISTICS(Tamb=25℃unless otherwise specified)
Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
Collector-base breakdown voltage | V(BR)CBO | lc=100μA, lE=0 | 50 |
|
| V |
Collector-emitter breakdown voltage | V(BR)CEO | lc=1mA, lB=0 | 45 |
|
| V |
Emitter-base breakdown voltage | V(BR)EBO | lE=100μA,lc=0 | 5 |
|
| V |
Collector cut-off current | lCBO | VCB=50V, lB=0 |
|
| 0.1 | μA |
Collector cut-off current | lCEO | VCE=35V, lB=0 |
|
| 1 | μA |
Emitter cut-off current | lEBO | VEB=5V, lc=0 |
|
| 0.1 | μA |
DC current gain | hFE | VCE=5V,lc=1mA | 60 |
| 1000 |
|
Collector-emitter saturation voltage | VCE(sat) | lc=-100mA,lB=5mA |
|
| 0.3 | V |
Base-emitter saturation voltage | VBE(sat) | lc=100mA,lB=5mA |
|
| 1 | V |
Transition frequency | fT | VCE=5V,lc=10mA f=30MHZ | 150 |
|
| MHZ |
CLASSIFICATION OF hFE(1)
Rank | A | B | C | D |
Range | 60-150 | 100-300 | 200-600 | 400-1000 |
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三极管A92，TO-92，EBC
信息内容：厂家直销，长期大量供应三极管A92，TO-92，欢迎来电咨询。 dzsc/18/8674/18867412.jpgELECTRICAL CHARACTERISTICS(Tamb=25℃unless otherwise specified) ParameterSymbolTest conditionsMINTYPMAXUNITCollector-base breakdown voltageV(BR)CBOlc=-100μA, lE=0-300 VCollector-emitter breakdown voltageV(BR)CEOlc=-1mA, lB=0-300 VEmitter-base breakdown voltageV(BR)EBOlE=-100μA,lc=0-5 VCollector cut-off currentlCBOVCB=-200V, lE=0 -0.25μAEmitter cut-off currentlEBOVEB=-3V, lc=0 -0.1μADC current gainhFEVCE=-10V,lc=-10mA80 250 Collector-emitter saturation voltageVCE(sat)lc=-20mA,lB=-2mA -0.5VBase-emitter saturation voltageVBE(sat)lc=-20mA,lB=-2mA -0.9VTransition frequencyfrVCE=-20V,lc=-10mA,f=-30MHZ50 MHZ CLASSIFICATION OF hFE(1)RankAB1B2CRange80-100100-150150-200200-250 "
电源、节能灯三极管，13001，ECB，TO-92
信息内容：厂家直销，长期大量供应三极管13001，有0.66和0.83两种芯片，支架分铜铁，欢迎来电咨询。dzsc/18/9979/18997961.jpg ELECTRICAL CHARACTERISTICS（Tj=25℃Unless Otherwise Stated） ParameterSymbolTest conditionsMinMaxUnitCollector-Base Breakdown VoltageBVCBOIc=0.5mA,Ie=0600 VCollector-Emitter Breakdown VoltageBVCEOIc=10mA,Ib=0400 VEmitter-Base Breakdown VoltageBVEBOIe=1mA,Ic=07 VCollector-Base Cutoff CurrentICBOVcb=600V,Ie=0 100μACollector- EmitterCutoff CurrentICEOVce=400V,Ib=0 20μAEmitter-Base Cutoff CurrentIEBOVeb=7V,Ic=0 100μADC Current GainhFEVce=20V,Ic=20mA1040 Collector-Emitter Saturation VoltageVCE(sat)Ic=200mA,Ib=100mA 0.6VBase-Emitter Saturation VoltageVBE(sat)Ic=200mA,Ib=100mA 1.2VStorage TimeTsIc=0.1mA, (UI9600) 2μSFalling TimefTVCE=20V,Ic=20mAf=1MHZ5 MHZCLASSIFICATION OF Hfe(1)Range10-1515-2020-2530-35
