价 格: | 0.07 | |
品牌/商标: | 国产 | |
型号/规格: | 三极管A92 | |
应用范围: | 放大 | |
功率特性: | 小功率 | |
频率特性: | 中频 | |
极性: | PNP型 | |
结构: | 点接触型 | |
材料: | 硅(Si) | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 | |
营销方式: | 厂家直销 | |
产品性质: | 热销 |
厂家直销,长期大量供应三极管A92,TO-92,欢迎来电咨询。
dzsc/18/8674/18867412.jpg
ELECTRICAL CHARACTERISTICS(Tamb=25℃unless otherwise specified)
Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
Collector-base breakdown voltage | V(BR)CBO | lc=-100μA, lE=0 | -300 |
|
| V |
Collector-emitter breakdown voltage | V(BR)CEO | lc=-1mA, lB=0 | -300 |
|
| V |
Emitter-base breakdown voltage | V(BR)EBO | lE=-100μA,lc=0 | -5 |
|
| V |
Collector cut-off current | lCBO | VCB=-200V, lE=0 |
|
| -0.25 | μA |
Emitter cut-off current | lEBO | VEB=-3V, lc=0 |
|
| -0.1 | μA |
DC current gain | hFE | VCE=-10V,lc=-10mA | 80 |
| 250 |
|
Collector-emitter saturation voltage | VCE(sat) | lc=-20mA,lB=-2mA |
|
| -0.5 | V |
Base-emitter saturation voltage | VBE(sat) | lc=-20mA,lB=-2mA |
|
| -0.9 | V |
Transition frequency | fr | VCE=-20V,lc=-10mA,f=-30MHZ | 50 |
|
| MHZ |
CLASSIFICATION OF hFE(1)
Rank | A | B1 | B2 | C |
Range | 80-100 | 100-150 | 150-200 | 200-250 |
"
厂家直销,长期大量供应三极管13001,有0.66和0.83两种芯片,支架分铜铁,欢迎来电咨询。dzsc/18/9979/18997961.jpg ELECTRICAL CHARACTERISTICS(Tj=25℃Unless Otherwise Stated) ParameterSymbolTest conditionsMinMaxUnitCollector-Base Breakdown VoltageBVCBOIc=0.5mA,Ie=0600 VCollector-Emitter Breakdown VoltageBVCEOIc=10mA,Ib=0400 VEmitter-Base Breakdown VoltageBVEBOIe=1mA,Ic=07 VCollector-Base Cutoff CurrentICBOVcb=600V,Ie=0 100μACollector- EmitterCutoff CurrentICEOVce=400V,Ib=0 20μAEmitter-Base Cutoff CurrentIEBOVeb=7V,Ic=0 100μADC Current GainhFEVce=20V,Ic=20mA1040 Collector-Emitter Saturation VoltageVCE(sat)Ic=200mA,Ib=100mA 0.6VBase-Emitter Saturation VoltageVBE(sat)Ic=200mA,Ib=100mA 1.2VStorage TimeTsIc=0.1mA, (UI9600) 2μSFalling TimefTVCE=20V,Ic=20mAf=1MHZ5 MHZCLASSIFICATION OF Hfe(1)Range10-1515-2020-2530-35
厂家直销,长期大量供应三极管S8550,TO-92,欢迎来电咨询。 dzsc/19/0503/19050369.jpgELECTRICAL CHARACTERISTICS(Tamb=25℃unless otherwise specified) ParameterSymbolTest conditionsMINTYPMAXUNITCollector-base breakdown voltageV(BR)CBOlc=-100μA, lE=0-40 VCollector-emitter breakdown voltageV(BR)CEOlc=-1mA, lB=0-25 VEmitter-base breakdown voltageV(BR)EBOlE=-100μA,lc=0-5 VCollector cut-off currentlCBOVCB=-40V, lE=0 -0.1μACollector cut-off currentlCEOVCE=-20V, lB=0 -1μAEmitter cut-off currentlEBOVEB=-5V, lc=0 -0.1μADC current gainhFEVCE=-1V,lc=-50mA85 400 Collector-emitter saturation voltageVCE(sat)lc=-500mA,lB=-50mA -0.6VBase-emitter saturation voltageVBE(sat)lc=-500mA,lB=-50mA -1.2VTransition frequencyfTVCE=-6V,lc=-20mAf=30MHZ150180 MHZCLASSIFICATION OF hFE(1)RankBCDD3Range85-160120-200160-300300-400