NCV2903 低偏移电压双路比较器
NCV2903DR2G
NCV2903DMR2G
产品特性
1.宽单电源范围:2.0V-36V
2.双电源范围:±1.0 V至±18V
3.极低的电源电压电流消耗独立:0.4mA
4.低输入偏置电流:25 nA的
5.低输入失调电流:5.0 nA的
6.低输入失调电压:5.0测量值()LM293/393
7.输入共模范围内的地电平
8.差分输入电压范围等于电源电压
9.输出电压兼容DTL,ECL,TTL,MOS和CMOS逻辑电平
10.输入ESD钳位
11.无铅封装
BSC059N03SG 快速开关MOSFET,功率晶体管完整型号:BSC120N03LSGBSC119N03SGBSC106N025SGBSC094N03SGBSC079N03SGBSC059N03SGBSC042N03SGBSC020N025SGBSC022N03SGBSC032N03SGBSC042N03SG封装规格:TDSON-8最小包装:5000PCS/盘产品用途:笔记本电脑特点1.快速开关MOSFET的开关电源2.笔记本电脑的直流/直流转换器3.N沟道4.逻辑电平5.出色的栅极电荷x的RDS(on)6.非常低的导通电阻的RDS(on)7.卓越的热阻8.额定雪崩9.dv / dt的额定
STB11NK40ZT4 功率MOSFET,400V,N沟道,0.49Ω,9A型号:STB11NK40STB11NK40ZSTB11NK40ZT4STP11NK40ZSTP11NK40ZFP厂商:ST/意法半导体封装:SOT-263,TO-220,TO-220F批号:10+供应数量:50000PCS最小包装:1000/盘,管装产品特点:Type VDSS RDS(on) ID PwSTB11NK40Z 400V <0.55Ω 10A 110WSTP11NK40Z 400V <0.55Ω 10A 110WSTP11NK40ZFP 400V <0.55Ω 10A 30W1.极高的dv/dt的能力2.100%雪崩测试3.天关电荷减少4.非常低的固有电容5.制造业重复性非常好DescriptionThe SuperMESH? series is obtained through anextreme optimization of ST’s well establishedstrip-based PowerMESH? layout. In addition topushing on-resistance significantly down, specialcare is taken to ensure a very good dv/dtcapability for the most demanding applications.Applications1.Switching application"