价 格: | 2.60 | |
品牌/商标: | ST/意法 | |
型号/规格: | STB11NK40ZT4 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 耗尽型 | |
用途: | HF/高频(射频)放大 | |
封装外形: | CHIP/小型片状 | |
材料: | N-FET硅N沟道 | |
集电极允许电流ICM: | 1 | |
截止频率fT: | 15 | |
封装形式: | 贴片型 |
STB11NK40ZT4 功率MOSFET,400V,N沟道,0.49Ω,9A
型号:
STB11NK40
STB11NK40Z
STB11NK40ZT4
STP11NK40Z
STP11NK40ZFP
厂商:ST/意法半导体
封装:SOT-263,TO-220,TO-220F
批号:10+
供应数量:50000PCS
最小包装:1000/盘,管装
产品特点:
Type VDSS RDS(on) ID Pw
STB11NK40Z 400V <0.55Ω 10A 110W
STP11NK40Z 400V <0.55Ω 10A 110W
STP11NK40ZFP 400V <0.55Ω 10A 30W
1.极高的dv/dt的能力
2.100%雪崩测试
3.天关电荷减少
4.非常低的固有电容
5.制造业重复性非常好
Description
The SuperMESH? series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH? layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Applications
1.Switching application
BCR553分类:三极管类型:数字三极管厂商:英飞凌 InfineonVceo:50VIc:500maFt:150MHZhFE:40P:330mW极性:PNP封装:SOT23
AAT3222IGV-2.4-T1 150毫安功率LDO线性稳压器完整型号AAT3222IGV-1.8-T1AAT3222IGV-2.0-T1AAT3222IGV-2.3-T1AAT3222IGV-2.4-T1AAT3222IGV-2.5-T1AAT3222IGV-2.7-T1AAT3222IGV-2.8-T1AAT3222IGV-2.85-T1AAT3222IGV-2.9-T1AAT3222IGV-3.0-T1AAT3222IGV-3.3-T1AAT3222IGV-3.5-T1AAT3221IGV-2.8-2T1AAT3221IGV-3.3-2-T1特点1.1μA静态电流低压差:200mV的(典型)保证150mA输出高精确度:± 2%电流限制保护过温保护极低功耗关断模式低温度系数工厂编程输出电压枚1.5V到3.5V稳定运行,几乎任何输出电容器类型高或低引脚启用4KV电气公共服务电子化5引脚的SOT23或8引脚SC70JW封装-40 ° C至+85 ° C温度范围应用蜂窝电话数码相机手持式电子产品笔记本电脑掌上电脑便携式通信设备远程控制