价 格: | 0.30 | |
品牌/商标: | AOS/美国万代 | |
型号/规格: | AO3401 | |
种类: | 结型(JFET) | |
沟道类型: | P沟道 | |
导电方式: | 增强型 | |
用途: | A/宽频带放大 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | P-FET硅P沟道 | |
开启电压: | 10(V) | |
夹断电压: | 2(V) | |
极间电容: | 0.1(pF) | |
低频噪声系数: | 20(dB) | |
漏极电流: | 2(mA) | |
耗散功率: | 3(mW) |
30V P-Channel Enhancement-Mode MOSFET 30V P 沟道增强型 MOS 管
VDS= -30V
RDS(ON),Vgs@-10V,Ids@-4.2A = 60mΩ
RDS(ON),Vgs@-4.5V,Ids@-4.0A= 75mΩ
R , V @-2.5V, I @-1.0A = 120mΩ
dzsc/18/8645/18864578.jpgFDN338P P-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral DescriptionSuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.TMFeatures-1.6 A, -20 V, RDS(ON) = 0.13 @ VGS = -4.5 V RDS(ON) = 0.18 @ VGS = -2.5 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.SuperSOTTM-3SuperSOTTM-6Supe...
SiliconNChannelJunctionTypeLowNoisePre-Amplifier,ToneControlAmplifierandDC-ACHighInputImpedanceAmplifierCircuitApplications