厂价直销2SD313三极管
| 价 格： | 0.45 | |
| 加工定制： | 是 | |
| 品牌/商标： | 仙童,PMC | |
| 型号/规格： | 2SD313 | |
| 应用范围： | 达林顿 | |
| 材料： | N-FET硅N沟道 | |
| 极性： | NPN型 | |
| 击穿电压VCEO： | `（V） | |
| 集电极允许电流ICM： | `（A） | |
| 集电极耗散功率PCM： | `（W） | |
| 截止频率fT： | `（MHz） | |
| 结构： | 平面型 | |
| 封装形式： | 直插型 | |
| 封装材料： | 塑料封装 |
TO-220 Plastic-Encapsulate Transistors
2SD313 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 1.75 W (Tamb=25℃)
Collector current
ICM: 3 A
Collector-base voltage
V(BR)CBO: 60 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=100μA, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 60 V
Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V
Collector cut-off current ICBO VCB=60V, IE=0 100 μA
Collector cut-off current ICEO VCE=60V, IE=0 1 mA
Emitter cut-off current IEBO VEB=4V, IC=0 100 μA
hFE(1) VCE=2V, IC=1A 40 320
DC current gain
hFE(2) VCE=2V, IC=0.1A 40
Collector-emitter saturation voltage VCE(sat) IC=2A, IB=200mA 1 V
Base-emitter voltage VBE VCE=2V, IC=1A 1.5 V
Transition frequency fT VCE=5V, IC=500mA 8 MHz
Collector output capacitance Cob VCB=10V, IE=0,f=1MHz 65 pF
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