| 价 格: | 面议 | |
| 品牌/商标: | FAIRCHILD/仙童 | |
| 型号/规格: | HGTG12N60A4D G12N60A4D | |
| 种类: | 结型(JFET) | |
| 沟道类型: | N沟道 | |
| 导电方式: | 耗尽型 | |
| 用途: | MOS-FBM/全桥组件 | |
| 封装外形: | CER-DIP/陶瓷直插 | |
| 材料: | P-FET硅P沟道 |
仙童FSC进口原装场效应管 HGTG12N60A4D G12N60A4D
仙童FSC进口原装场效应管 HGTG12N60A4D G12N60A4D
HGTG12N60A4D G12N60A4D 产品规格 参数 PDF
Datasheets HGTG12N60A4D
Product Photos TO-247-3 Pkg
Product Training Modules High Voltage Switches for Power Processing
SMPS Power Switch
Product Change Notification Lead Frame Change 20/Dec/2007
Catalog Drawings IGBT TO-247 Package
Standard Package 150
Category Discrete Semiconductor Products
Family IGBTs - Single
Series -
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Current - Collector (Ic) (Max) 54A
Power - Max 167W
Input Type Standard
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Packaging Tube
Catalog Page 1389 (US2011 PDF)
Other Names HGTG12N60A4D_NL
HGTG12N60A4D_NL-ND
ST进口原装场效应管 STPS3060CW ST进口原装场效应管 STPS3060CW STPS3060CW产品规格 参数Datasheets STPS3060CWProduct Photos TO-247 PkgStandard Package 30Category Discrete Semiconductor ProductsFamily Diodes, Rectifiers - ArraysSeries -Voltage - Forward (Vf) (Max) @ If 850mV @ 15ACurrent - Reverse Leakage @ Vr 150µA @ 60VCurrent - Average Rectified (Io) (per Diode) 15AVoltage - DC Reverse (Vr) (Max) 60VReverse Recovery Time (trr) -Diode Type SchottkySpeed Fast Recovery =< 500ns, > 200mA (Io)Diode Configuration 1 Pair Common CathodeMounting Type Through Hole, RadialPackage / Case TO-247-3Supplier Device Package TO-247-3Packaging TubeOther Names 497-12651-5STPS3060CW-ND "
dzsc/18/8607/18860764.jpg制造商: Infineon 产品种类: MOSFET RoHS: 详细信息 Product Type: MOSFET Power 配置: Single 晶体管极性: N-Channel 封装 / 箱体: PG-TO-252-3-11 电阻汲极/源极 RDS(导通): 15 m Ohms 汲极/源极击穿电压: 55 V 闸/源击穿电压: 2.1 V 漏极连续电流: 50 A 功率耗散: 65 W 工作温度: + 175 C 封装: Reel 最小工作温度: - 55 C