价 格: | 4.50 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SD5071 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
·Built-in Damper Diode
APPLICATIONS
·Designed for color TV horizontal output applications
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 1500 | V |
VCEO | Collector-Emitter Voltage | 800 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current- Continuous | 3.5 | A |
ICM | Collector Current-Peak | 10 | A |
PC | Collector Power Dissipation @ TC=25℃ | 50 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 2.5A; IB= 0.8A |
|
| 8.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 2.5A; IB= 0.8A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 800V ; IE= 0 |
|
| 10 | μA |
IEBO | Emitter Cutoff Current | VEB= 4V ; IC= 0 | 40 |
| 200 | mA |
hFE | DC Current Gain | IC= 0.5A; VCE= 5V | 8 |
|
|
|
VECF | C-E Diode Forward Voltage | IF= 3.5A |
|
| 2.0 | V |
fT | Current-Gain—Bandwidth Product | IC= 0.5A; VCE= 10V |
| 3 |
| MHz |
tf | Fall Time | IC= 3A, IB1= 0.8A; IB2= -1.6A RL= 66.7Ω; VCC= 200V |
|
| 0.4 | μs |
"
TO-247供应BUW11W三极管,有意者请联系!"
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 120V(Min)·Good Linearity of hFE·High Current Capability·Wide Area of Safe Operation·Complement to Type 2SB816 APPLICATIONS·For LF power amplifier, 50W output large power switchingapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 150VVCEOCollector-Emitter Voltage 120VVEBOEmitter-Base Voltage6VICCollector Current-Continuous8AICPCollector Current-Pulse12APCCollector Power Dissipation@ TC=25℃80WTJJunctionTemperature150℃TstgStorageTemperature Range-40~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 50mA ; RBE=∞120 VV(BR)CBOCollector-BaseBreakdownVoltage IC= 5mA; IE= 0150 VV(BR)EBOEmitter-BaseBreakdownVoltageIE= 5mA; IC= 06...