价 格: | 4.50 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SC4151 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 40V(Min)
·Collector Current-IC=15A(Max.)
·Low Collector Saturation Voltage
:VCE(sat)= 0.3V(Max.)@ IC=7.5A
APPLICATIONS
·Designed for use in drivers such as DC/DC converters
and actuators.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 60 | V |
VCEO | Collector-Emitter Voltage | 40 | V |
VEBO | Emitter-Base Voltage | 7 | V |
IC | Collector Current-Continuous | 15 | A |
ICM | Collector Current-Peak | 30 | A |
IB | Base Current-Continuous | 2 | A |
IBM | Base Current-Peak | 3 | A |
PT | Total Power Dissipation @ TC=25℃ | 30 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 0.1A; IB= 0 | 40 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 7.5A; IB= 0.4A |
|
| 0.3 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 7.5A; IB= 0.4A |
|
| 1.2 | V |
ICBO | Collector Cutoff Current | At rated Voltage |
|
| 100 | μA |
ICEO | Collector Cutoff Current | At rated Voltage |
|
| 100 | μA |
IEBO | Emitter Cutoff Current | At rated Voltage |
|
| 100 | μA |
hFE | DC Current Gain | IC= 7.5A ; VCE= 2V | 70 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 1.5A ; VCE= 10V |
| 50 |
| MHz |
Switching times | ||||||
ton | Turn-on Time | IC= 7.5A, IB1= 0.75A; IB2= -0.75A; RL= 4Ω; VBB2= 4V |
|
| 0.3 | μs |
tstg | Storage Time |
|
| 1.5 | μs | |
tf | Fall Time |
|
| 0.5 | μs |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance,Junction to Case | 4.16 | ℃/W |
DESCRIPTION ·High Current Capability·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -140V(Min.)·Complement to Type 2SC2460 APPLICATIONS·Designed for power amplifer and general purposeapplications. Absolute maximum ratings(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-140VVCEOCollector-Emitter Voltage-140VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous -12APCCollector Power Dissipation@TC=25℃100WTjJunction Temperature150℃TstgStorage Temperature-55~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -30mA; IB= 0-140 VV(BR)CBOCollector-Base Breakdown VoltageIC= -1mA; IE= 0-140 VV(BR)EBOEmitter-Base Breakdown VoltageIE= -1mA; IC= 0-5 VVCE(sat)Collector-Emitter Saturation VoltageIC= -5A; IB= -0.5A -2.0VICBOCollector Cutoff CurrentVCB= -140V; IE= 0 -10μAIEBOEmitter Cutoff CurrentVEB= -5V; IC= 0 -10μAhFEDC Cu...
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min)·High Power Dissipation-: PC= 60W(Max)@TC=25℃·Complement to Type 2SB558 APPLICATIONS·Designed for power amplifier applications.·Recommended for 40W high-fidelity audio frequencyamplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage100VVCEOCollector-Emitter Voltage100VVEBOEmitter-Base Voltage5VICCollector Current-Continuous7AIEEmitter Current-Continuous-7APCCollector Power Dissipation@TC=25℃60WTJJunction Temperature150℃TstgStorage Temperature-65~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 0.1A; IB= 0100 VV(BR)EBOEmitter-BaseBreakdownVoltageIE= 10mA; IC= 05 VVCE(sat)Collector-Emitter Saturation VoltageIC= 5A; IB= 0.5A 2.5VVBE(on)Base-Emitter On VoltageIC= 5A; VCE= 5V 2.0V...