价 格: | 10.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SA1050 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | PNP型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 金属封装 |
DESCRIPTION
·High Current Capability
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min.)
·Complement to Type 2SC2460
APPLICATIONS
·Designed for power amplifer and general purpose
applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -140 | V |
VCEO | Collector-Emitter Voltage | -140 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -12 | A |
PC | Collector Power Dissipation @TC=25℃ | 100 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -30mA; IB= 0 | -140 |
|
| V |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= -1mA; IE= 0 | -140 |
|
| V |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= -1mA; IC= 0 | -5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5A; IB= -0.5A |
|
| -2.0 | V |
ICBO | Collector Cutoff Current | VCB= -140V; IE= 0 |
|
| -10 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -10 | μA |
hFE | DC Current Gain | IC= -1A ; VCE= -5V | 55 |
| 240 |
|
fT | Current-Gain—Bandwidth Product | IC= -1A ; VCE= -10V |
| 70 |
| MHz |
u hFEClassifications
R | O | Y |
55-110 | 80-160 | 120-240 |
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min)·High Power Dissipation-: PC= 60W(Max)@TC=25℃·Complement to Type 2SB558 APPLICATIONS·Designed for power amplifier applications.·Recommended for 40W high-fidelity audio frequencyamplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage100VVCEOCollector-Emitter Voltage100VVEBOEmitter-Base Voltage5VICCollector Current-Continuous7AIEEmitter Current-Continuous-7APCCollector Power Dissipation@TC=25℃60WTJJunction Temperature150℃TstgStorage Temperature-65~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 0.1A; IB= 0100 VV(BR)EBOEmitter-BaseBreakdownVoltageIE= 10mA; IC= 05 VVCE(sat)Collector-Emitter Saturation VoltageIC= 5A; IB= 0.5A 2.5VVBE(on)Base-Emitter On VoltageIC= 5A; VCE= 5V 2.0V...
DESCRIPTION ·Low Collector Saturation Voltage-: VCE(sat)= -0.6V(Max)@IC= -7A·High Speed Switching APPLICATIONS·Designed for low-voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage -40VVCEOCollector-Emitter Voltage -20VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous-10AICMCollector Current-Peak-15APCCollector Power Dissipation@ Ta=25℃2WCollector Power Dissipation@ TC=25℃35TJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -10mA; IB=0-20 VVCE(sat)Collector-Emitter Saturation VoltageIC= -7A; IB= -0.23A -0.6VVBE(sat)Base-Emitter Saturation VoltageIC= -7A; IB= -0.23A -1.5VICBOCollector Cutoff CurrentVCB= -40V; IE= 0 -50μAIEBOEmitter Cutoff C...