价 格: | 面议 | |
产品类型: | 触发二极管 | |
品牌/商标: | ST/意法 | |
型号/规格: | DB3 | |
结构: | 点接触型 | |
材料: | 铝 | |
封装形式: | DO-35 | |
封装材料: | 玻璃封装 | |
反向电压VR: | 45(V) | |
正向直流电流IF: | 2(A) |
产品主要用于节能灯、电子变压器、调光台灯及其它电子产品的触发回路。
glass passivated, three-layer, two terminal, axial lead,hermetically sealed diacs are designed specifically for
triggering thyristors. They demonstrate low breakovercurrent at breakover voltage as they withstand peak pulsecurrent. These diacs are intended for use in thyristor phasecontrol, circuits for lamp-dimming, universal-motor speedcontrols, and heat controls.
Absolute Maximum Ratings (Ta= 25OC)
Parameter Symbol Value Unit
Power Dissipation (Ta= 65 OC) Ptot 150 mW
Repetitive Peak On-state Current (tp = 20 μs, f = 100 Hz) ITRM 2 A
Operating Junction and Storage Temperature Range Tj,Tstg - 40 to + 125 OC
产品广泛用于节能灯、放大电路等,欢迎来电查询! FEATURESPower dissipationPCM: 0.4 W (Tamb=25℃)Collector current ICM: 0.1 A Collector-base voltageV(BR)CBO: 50 VOperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
厂家特价直销.欢迎来电咨询! MJE13003 TRANSISTOR(NPN)1:FEATURES Power switching applications2:MAXIMUM RATINGS (TA=25℃ unless otherwise noted)symbolparametervalueunitsVcbo Collector-Base Voltage700VVceo Collector-Emitter Voltage400VVeboEmitter-Base Voltage9VIcCollector Current-Continuous(DC)4AIcCollector Current-Continuous(Pulse)8AIBBase Current2APcCollector Power Dissipation50WTJJunction Temperature150℃TstgStorage Temperature-55-150℃3:ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified)ParameterSymbolTest conditionsMINTYPMAXUNITCollector-base breakdown voltageV(BR)cboIC=1mA IE=0700 VCollector-emitter breakdown voltageV(BR)ceoIC=10mA IB=0400 VEmitter-base breakdown voltageV(BR)eboIE=1mA IC=09 VCollector cut-off CurrentIcboVcb=700V IE=0 1mACollector cut-off CurrentIceoVce=400V IB=0 0.1mAEmitter cut-off CurrentIeboVeb=9V IC=0 1mADC Current gainhEF(1)Vce=5V IC=1AVce=5V IC=2A10+8 4040 Collector-emitter saturation voltageVCE(sat)IC=1A IB=0.2AIC=4A IB=1...