价 格: | 10.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SA753 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | PNP型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 金属封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -110V(Min.)
·Complement to Type 2SC1343
APPLICATIONS
·Designed for 100W audio amplifier power output applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -140 | V |
VCEO | Collector-Emitter Voltage | -110 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -10 | A |
IC | Collector Current-Peak | -12 | A |
PC | Collector Power Dissipation @TC=25℃ | 100 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA; RBE=∞ | -110 |
|
| V |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= -5mA; IE= 0 | -140 |
|
| V |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= -5mA; IC= 0 | -5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5A; IB= -1A |
|
| -1.5 | V |
VBE(on) | Base-Emitter On Voltage | IC= -1A; VCE= -5V |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -30V; IE= 0 |
|
| -1 | mA |
hFE-1 | DC Current Gain | IC= -1A; VCE= -5V | 30 |
| 200 |
|
hFE-2 | DC Current Gain | IC= -10A; VCE= -5V | 15 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= -1A; VCE= -5V |
| 20 |
| MHz |
u hFE-1Classifications
A | B | C |
30-60 | 50-120 | 100-200 |
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO= 500V(Min)·High Switching Speed·Wide Area of Safe Operation APPLICATIONS·Designed for switching regulator and general purposeapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 800VVCEOCollector-Emitter Voltage 500VVEBOEmitter-Base voltage7VICCollector Current-Continuous10AICMCollector Current-Peak20AIBBase Current-Continuous3APCCollector Power Dissipation@ TC=25℃90WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CBOCollector-Base Breakdown Voltage IC= 1mA; IE= 0800 VV(BR)CEOCollector-Emitter Breakdown Voltage IC= 5mA; RBE=∞500 VV(BR)EBOEmitter-Base Breakdown VoltageIE= 1m A; IC= 07 VVCE(s...
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO= 400V(Min)·High Switching Speed·High Reliability APPLICATIONS·Designed for switching regulator and general purposeapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 500VVCEOCollector-Emitter Voltage 400VVEBOEmitter-Base voltage10VICCollector Current-Continuous18AICMCollector Current-Peak36AIBBase Current-Continuous6APCCollector Power Dissipation@ TC=25℃130WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 25mA ; IB= 0400 VVCE(sat)Collector-Emitter Saturation VoltageIC= 10A; IB= 2A 0.5VVBE(sat)Base-Emitter Saturation VoltageIC= 10A; IB= 2A 1.3VICBOCollector Cutoff CurrentVCB= 500V ; IE= 0 0.1mAIEB...