| 价 格: | 面议 | |
| 品牌/商标: | SI | |
| 型号/规格: | MJE13005 | |
| 应用范围: | 功率 | |
| 材料: | 锗 | |
| 极性: | NPN型 | |
| 击穿电压VCBO: | 700(V) | |
| 集电极允许电流ICM: | 5.0(A) | |
| 集电极耗散功率PCM: | 75(W) | |
| 截止频率fT: | 8(MHz) | |
| 结构: | 平面型 | |
| 封装形式: | TO-220 | |
| 封装材料: | 塑料封装 |
应用:节能灯,电子镇流器,电子变压器,开关电源。
特点:耐压高,开关速度快,安全工作区宽,符合ROHS规范。
芯片面积:2.52*2.52 欢迎来电咨询!
产品主要用于节能灯、电子变压器、调光台灯及其它电子产品的触发回路。 glass passivated, three-layer, two terminal, axial lead,hermetically sealed diacs are designed specifically fortriggering thyristors. They demonstrate low breakovercurrent at breakover voltage as they withstand peak pulsecurrent. These diacs are intended for use in thyristor phasecontrol, circuits for lamp-dimming, universal-motor speedcontrols, and heat controls. Absolute Maximum Ratings (Ta= 25OC)Parameter Symbol Value UnitPower Dissipation (Ta= 65 OC) Ptot 150 mWRepetitive Peak On-state Current (tp = 20 μs, f = 100 Hz) ITRM 2 AOperating Junction and Storage Temperature Range Tj,Tstg - 40 to + 125 OC"
产品广泛用于节能灯、放大电路等,欢迎来电查询! FEATURESPower dissipationPCM: 0.4 W (Tamb=25℃)Collector current ICM: 0.1 A Collector-base voltageV(BR)CBO: 50 VOperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃