价 格: | 3.70 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SC4466 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 80V(Min)
·Good Linearity of hFE
·Complement to Type 2SA1693
APPLICATIONS
·Designed for audio and general purpose applications
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 120 | V |
VCEO | Collector-Emitter Voltage | 80 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current-Continuous | 6 | A |
IB | Base Current-Continuous | 3 | A |
PC | Collector Power Dissipation @ TC=25℃ | 60 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 50mA ; IB= 0 | 80 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 2A; IB= 0.2A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 120V ; IE= 0 |
|
| 10 | μA |
IEBO | Emitter Cutoff Current | VEB= 6V; IC= 0 |
|
| 10 | μA |
hFE | DC Current Gain | IC= 2A ; VCE= 4V | 50 |
| 180 |
|
COB | Output Capacitance | IE= 0 ; VCB= 10V;f= 1.0MHz |
| 110 |
| pF |
fT | Current-Gain—Bandwidth Product | IE= -0.5A ; VCE= 12V |
| 20 |
| MHz |
Switching Times | ||||||
ton | Turn-on Time | IC= 3A ,RL= 10Ω, IB1= -IB2= 0.3A,VCC=30V |
| 0.16 |
| μs |
tstg | Storage Time |
| 2.6 |
| μs | |
tf | Fall Time |
| 0.34 |
| μs |
u hFEClassifications
O | P | Y |
50-100 | 70-140 | 90-180 |
"
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -50V(Min)·High Power Dissipation-: PC= 25W(Max)@TC=25℃ APPLICATIONS·Designed for audio power amplifier and regulatorapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-70VVCEOCollector-Emitter Voltage-50VVEBOEmitter-Base Voltage-8VICCollector Current-Continuous-3AIEEmitter Current-Continuous3APCCollector Power Dissipation@Ta=25℃1.5WCollector Power Dissipation@TC=25℃25TJJunction Temperature150℃TstgStorage Temperature-65~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -0.1A; IB= 0-50 VV(BR)CBOCollector-Base Breakdown VoltageIC= -2mA; IE= 0-70 VV(BR)EBOEmitter-BaseBreakdownVoltageIE= -10mA; IC= 0-8 VVCE(sat)Collector-Emitter Saturation VoltageIC= -3A; IB= -0.3A -1.5VVBE(sat)Base-Emitter Saturation Volta...
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -180V(Min.)·High Power Dissipation APPLICATIONS·Designed for power switching amplifier and general purposeapplications. Absolute maximum ratings(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-180VVCEOCollector-Emitter Voltage-180VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous -10AIBBase Current-Continuous -4APCCollector Power Dissipation@TC=25℃100WTjJunction Temperature150℃TstgStorage Temperature-65~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -25mA; IB= 0-180 VV(BR)CBOCollector-Base Breakdown VoltageIC= -1mA; IE= 0-180 VV(BR)EBOEmitter-Base Breakdown VoltageIE= -1mA; IC= 0-5 VVCE(sat)Collector-Emitter Saturation VoltageIC= -5A; IB= -0.5A -2.0VVBE(sat)Base-Emitter Saturation VoltageIC= -5A; IB= -0.5A -2.5VICBOCollector Cutoff CurrentVCB= -180V; IE= ...