批发2SB772三极管
| 价 格： | 0.20 | |
| 是否提供加工定制： | 是 | |
| 品牌/商标： | CLJ.NEC | |
| 型号/规格： | 2SB772 | |
| 应用范围： | 放大 | |
| 材料： | 硅(Si) | |
| 极性： | PNP型 | |
| 集电极允许电流ICM： | 3（A） | |
| 集电极耗散功率PCM： | 40（W） | |
| 结构： | 平面型 | |
| 封装形式： | 直插型 | |
| 封装材料： | 塑料封装 |
PNP SILICON POWER TRANSISTOR
2SB772
DESCRIPTION
The 2SB772 is PNP silicon transistor suited for the output stage of 3
W audio amplifier, voltage regulator, DC-DC converter and relay
driver.
FEATURES
• Low saturation voltage
VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A)
• Excellent hFE linearity and high hFE
hFE = 60 to 400 (VCE = −2 V, IC = −1 A)
• Less cramping space required due to small and thin package and
reducing the trouble for attachment to a radiator.
No insulator bushing required.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature −55 to +150°C
Junction Temperature 150°C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA = 25°C) 1.0 W
Total Power Dissipation (TC = 25°C) 10 W
Maximum Voltages and Currents (TA = 25°C)
VCBO Collector to Base Voltage −40 V
VCEO Collector to Emitter Voltage −30 V
VEBO Emitter to Base Voltage −5.0 V
IC(DC) Collector Current (DC) −3.0 A
IC(pulse)
Note Collector Current (pulse) −7.0 A
Note Pulse Test PW ≤ 350 μs, Duty Cycle ≤ 2%
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厂价直销2SD313三极管
信息内容：TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR (NPN) FEATURESPower dissipationPCM: 1.75 W (Tamb=25℃)Collector currentICM: 3 ACollector-base voltageV(BR)CBO: 60 VOperating and storage junction temperature rangeTJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO Ic=100μA, IE=0 60 VCollector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 60 VEmitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 VCollector cut-off current ICBO VCB=60V, IE=0 100 μACollector cut-off current ICEO VCE=60V, IE=0 1 mAEmitter cut-off current IEBO VEB=4V, IC=0 100 μAhFE(1) VCE=2V, IC=1A 40 320DC current gainhFE(2) VCE=2V, IC=0.1A 40Collector-emitter saturation voltage VCE(sat) IC=2A, IB=200mA 1 VBase-emitter voltage VBE VCE=2V, IC=1A 1.5 VTransition frequency fT VCE=5V, IC=500mA 8 MHzCollector output capacitance Cob VCB=10V, IE=0,f=1MHz 65 pF
三极管TIP32C
信息内容：TIP32 Series(TIP32/32A/32B/32C)Medium Power Linear Switching Applications• Complement to TIP31/31A/31B/31C PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise notedAbsolute Maximum Ratings TC=25°C unless otherwise notedElectrical Characteristics TC=25°C unless otherwise noted* Pulse Test: PW≤300μs, Duty Cycle≤2%Symbol Parameter Value UnitsVCBO Collector-Base Voltage : TIP32C - 100VVCEO Collector-Emitter Voltage : TIP32C -100VVEBO Emitter-Base Voltage - 5 VIC Collector Current (DC) - 3 AICP Collector Current (Pulse) - 5 AIB Base Current - 3 APC Collector Dissipation (TC=25°C) 40 WPC Collector Dissipation (Ta=25°C) 2 WTJ Junction Temperature 150 °CTSTG Storage Temperature - 65 ~ 150 °C
