价 格: | 4.50 | |
是否提供加工定制: | 是 | |
品牌/商标: | isc | |
型号/规格: | 2SD2095 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·High Breakdown Voltage-
:VCBO= 1500V (Min)
·High Switching Speed
·Low Saturation Voltage
·Built-in Damper Diode
APPLICATIONS
·Designed for color TV horizontal output applications
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 1500 | V |
VCEO | Collector-Emitter Voltage | 600 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current- Continuous | 5 | A |
IB | Base Current- Continuous | 2.5 | A |
PC | Collector Power Dissipation @ TC=25℃ | 50 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= 200mA ; IC= 0 | 5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 3.5A; IB= 0.8A |
|
| 5.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 3.5A; IB= 0.8A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 500V; IE= 0 |
|
| 10 | μA |
hFE | DC Current Gain | IC= 1A ; VCE= 5V | 8 |
|
|
|
VECF | C-E Diode Forward Voltage | IF= 5A |
|
| 2.0 | V |
fT | Current-Gain—Bandwidth Product | IC= 0.1A ; VCE= 10V |
| 3 |
| MHz |
COB | Output Capacitance | IE= 0 ; VCB= 10V; ftest=1.0MHz |
| 105 |
| pF |
tf | Fall Time | ICP= 3.5A, IB1(end)= 0.8A |
| 0.5 | 1.0 | μs |
DESCRIPTION ·High Voltage·DARLINGTON APPLICATIONS·High ruggedness electronic ignitions·High voltage ignition coil driver Absolute maximum ratings (Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage450VVCEOCollector-Emitter Voltage400VVEBOEmitter-Base Voltage5VICCollector Current15AICMCollector Current-peak30AIBBase Current1AIBMBase Current-peak5APCCollector Power Dissipation@TC=25℃125WTjJunction Temperature150℃TstgStorageTemperature Range-40~150℃ THERMAL CHARACTERISTICSSYMBOLPARAMETERMAXUNITRth j-cThermal Resistance, Junction to Case1.0℃/W ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 0.1A; IB= 0; L= 10mH400 VVCE(sat)-1Collector-Emitter Saturation VoltageIC= 7A; IB= 70mA 1.6VVCE(sat)-2Collector-Emitter Saturation VoltageIC= 8 A; IB= 100mA 1.8VVCE(sat)-3Collector-Emitter Saturation VoltageIC= 10 A; IB= 250mA 1.8VVBE(sat)-1Base-Emit...
DESCRIPTION ·Collector-Base Breakdown Voltage-: VCBO= 1500V (Min.)·High Switching Speed·Built-in Damper Diode APPLICATIONS·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector- Base Voltage 1500VVCESCollector-Emitter Voltage 1500VVEBOEmitter-Base Voltage5VICCollector Current-Continuous4AICMCollector Current-Peak15AIBMBase Current-Peak3.5APCCollector Power Dissipation@ TC=25℃70WTJJunctionTemperature130℃TstgStorageTemperature Range-55~130℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)EBOEmitter-Base Breakdown VoltageIE= 500mA; IC= 05 VVCE(sat)Collector-Emitter Saturation VoltageIC= 3A; IB= 1A 1.0VVBE(sat)Base-Emitter Saturation VoltageIC= 3A; IB= 1A 1.5VICBOCollector Cutoff CurrentVCB= 750V; IE= 0VCB= 1500V; IE= 0 501.0μAmAhFED...