价 格: | 0.10 | |
是否提供加工定制: | 否 | |
产品类型: | 快恢复二极管 | |
是否进口: | 是 | |
品牌/商标: | FAIRCHILD/仙童 | |
型号/规格: | RHRP15120 | |
材料: | 硅(Si) | |
主要参数: | 15A 1200V | |
用途: | 开关电源 |
15A, 1200V Hyperfast Diode
The RHRP15120 is a hyperfast diode with soft recovery
characteristics (t
rr
< 65ns). It has half the recovery time of
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49098.
Symbol
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <65ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
30A, 1200V Hyperfast DiodeThe RHRP30120 is a hyperfast diode with soft recoverycharacteristics (trr < 65ns).It has half the recovery time ofultrafast diodes and is of silicon nitride passivatedion-implanted epitaxial planar construction.This device is intended for use as a freewheeling/clampingdiode and rectifier in a variety of high frequency switchingpower supplies and other power switching applications. Its lowstored charge and hyperfast soft recoveryminimize ringing andelectrical noise in many power switching circuits, reducingpower loss in the switching transistors.Formerly developmental type TA49041.SymbolFeatures• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <65ns• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175oC• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V• Avalanche Energy Rated• Planar ConstructionApplications• Switching Power Supplies• Power Switching Circuit...
NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise noted* PW≤300μs, Duty Cycle≤10%Electrical Characteristics TC=25°C unless otherwise noted* Pulse Test: PW≤350μs, Duty Cycle≤2%PulsedhFE ClassificationSymbol Parameter Value UnitsVCBO Collector-Base Voltage 150 VVCEO Collector-Emitter Voltage 100 VVEBO Emitter-Base Voltage 7 VIC Collector Current (DC) 7 AICP *Collector Current (Pulse) 15 AIB Base Current (DC) 3.5 APC Collector Dissipation (TC=25°C) 40 WCollector Dissipation (TA=25°C) 1.5 WTJ Junction Temperature 150 °CTSTG Storage Temperature - 55 ~ 150 °CSymbol Parameter Test Condition Min. Max. UnitsVCEO(sus) Collector-Emitter Sustaining Voltage IC = 5A, IB1= 0.5A, L = 1mH 100 VVCEX(sus)1 Collector-Emitter Sustaining Voltage IC = 5A, IB1 = -IB2 = 0.5AVBE(off) = -5V, L = 180μH, Clamped100 VVCEX(sus)2 Collector-Emitter Sustaining Voltage IC = 10A, IB1 =1A, IB2 = -0.5A,VBE(off) = -5V, L = 180μH, Clamped100 ...