价 格: | 0.10 | |
是否提供加工定制: | 否 | |
产品类型: | 快恢复二极管 | |
是否进口: | 是 | |
品牌/商标: | FAIRCHILD/仙童 | |
型号/规格: | RHRP30120 | |
材料: | 硅(Si) | |
主要参数: | 30A 1200V | |
用途: | 开关电源 |
30A, 1200V Hyperfast Diode
The RHRP30120 is a hyperfast diode with soft recovery
characteristics (trr < 65ns).It has half the recovery time of
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of high frequency switching
power supplies and other power switching applications. Its low
stored charge and hyperfast soft recoveryminimize ringing and
electrical noise in many power switching circuits, reducing
power loss in the switching transistors.
Formerly developmental type TA49041.
Symbol
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <65ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175oC
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise noted* PW≤300μs, Duty Cycle≤10%Electrical Characteristics TC=25°C unless otherwise noted* Pulse Test: PW≤350μs, Duty Cycle≤2%PulsedhFE ClassificationSymbol Parameter Value UnitsVCBO Collector-Base Voltage 150 VVCEO Collector-Emitter Voltage 100 VVEBO Emitter-Base Voltage 7 VIC Collector Current (DC) 7 AICP *Collector Current (Pulse) 15 AIB Base Current (DC) 3.5 APC Collector Dissipation (TC=25°C) 40 WCollector Dissipation (TA=25°C) 1.5 WTJ Junction Temperature 150 °CTSTG Storage Temperature - 55 ~ 150 °CSymbol Parameter Test Condition Min. Max. UnitsVCEO(sus) Collector-Emitter Sustaining Voltage IC = 5A, IB1= 0.5A, L = 1mH 100 VVCEX(sus)1 Collector-Emitter Sustaining Voltage IC = 5A, IB1 = -IB2 = 0.5AVBE(off) = -5V, L = 180μH, Clamped100 VVCEX(sus)2 Collector-Emitter Sustaining Voltage IC = 10A, IB1 =1A, IB2 = -0.5A,VBE(off) = -5V, L = 180μH, Clamped100 ...
RHRP306030A, 600V Hyperfast DiodesFeatures• Hyperfast with Soft Recovery ........................<40ns• Operating Temperature..................................175°C• Reverse Voltage Up To ..................................600V• Avalanche Energy Rated• Planar ConstructionApplications• Switching Power Supplies• Power Switching Circuits• General PurposeOrdering InformationsNote: When opdering, use the entire part number.DescriptionThe RHRP3060 are hypersast diodes with soft recovery characteristics(trr < 40ns). They have half the recovery time of ultrafastdiodes and are of silicon nitride passivated ion-implanted epitaxialplanar construction.These devices are intended for use as freewheeling/clampingdiodes and rectifiers in a variety of switching power suppliesand other power switching applications. Their low stored chargeand hyperfast soft recovery minimize ringing and electricalnoise in many power switching circuits, thus reducing po...