A Transistor is a semiconductor device used to amplify and switch electronic signals and power. Bipolar (Junction) Transistor (BJT) is a three-terminal electronic device constructed of doped semiconductor material.
NPN is one of the two types of bipolar transistors, consisting of a layer of P-doped semiconductor (the "base") between two N-doped layers.
产品宽度 | 2.66mm |
产品长度 | 7.74mm |
产品高度 | 11.04mm |
供应商封装 | TO-225 |
安装 | 通孔 |
引脚数目 | 3 |
发射极基极电压 | 5V |
工作温度 | 150°C |
操作频率 | 3MHz |
直流集电极电流 | 1A |
集电极发射极发射器电压 | 80V |
集电极基极电压 | 80V |
最小工作温度 | -65°C |
每芯片单元数目 | 1 |
类别 | 双极功率 |
类型 | NPN |
配置 | 单路 |
数量 | 单价 |
1 | 2.45 |
10 | 2.43 |
50 | 2.42 |
100 | 2.41 |
250 | 2.4 |
SMT 双向 TVS,高达 600W 系列概览瞬态电压抑制器(二极管)技术规格ESD 保护有产品宽度3.81mm产品长度4.57mm产品高度2.41mm供应商封装DO-214AA安装表面安装引脚数目2方向类型双向 峰值脉冲电流38A工作温度150°C箝压15.6V逆向平衡电压9.4V逆向泄漏电流5μA最小击穿电压10.5V最小工作温度-65°C每芯片单元数目1测试电流1mA配置单路单价(不含税) /个 (每包:5个)数量单价55.36254.59"
NPN 复合晶体管 系列概览dzsc/18/8493/18849388.jpgNPN 复合晶体管A Transistor is a semiconductor device used to amplify and switch electronic signals and power. The Darlington Transistor is a compound structure consisting of two bipolar transistors connected in such a way that the current amplified by the first transistor is amplified further by the second one. This configuration gives a much higher current gain than each transistor taken separately.NPN is one of the two types of bipolar transistors, consisting of a layer of P-doped semiconductor (the "base") between two N-doped layers.技术规格产品宽度2.66mm产品长度7.74mm产品高度11.04mm供应商封装TO-225安装通孔引脚数目3 发射极基极电压5V工作温度150°C连续直流集电极电流4A集电极发射极发射器电压80V集电极基极电压80V集电极截止电流100μA最小工作温度-55°C每芯片单元数目1类型NPN配置单路单价(不含税) 个数量单价13.37102.77502.71002.662502.64