| 价 格: | 5.36 | |
| 是否提供加工定制: | 否 | |
| 产品类型: | 瞬变抑制二极管 | |
| 是否进口: | 是 | |
| 品牌/商标: | 0N/安森美 | |
| 型号/规格: | P6SMB11CAT3G |
| ESD 保护 | 有 |
| 产品宽度 | 3.81mm |
| 产品长度 | 4.57mm |
| 产品高度 | 2.41mm |
| 供应商封装 | DO-214AA |
| 安装 | 表面安装 |
| 引脚数目 | 2 |
| 方向类型 | 双向 |
| 峰值脉冲电流 | 38A |
| 工作温度 | 150°C |
| 箝压 | 15.6V |
| 逆向平衡电压 | 9.4V |
| 逆向泄漏电流 | 5μA |
| 最小击穿电压 | 10.5V |
| 最小工作温度 | -65°C |
| 每芯片单元数目 | 1 |
| 测试电流 | 1mA |
| 配置 | 单路 |
| 数量 | 单价 |
| 5 | 5.36 |
| 25 | 4.59 |
NPN 复合晶体管 系列概览dzsc/18/8493/18849388.jpgNPN 复合晶体管A Transistor is a semiconductor device used to amplify and switch electronic signals and power. The Darlington Transistor is a compound structure consisting of two bipolar transistors connected in such a way that the current amplified by the first transistor is amplified further by the second one. This configuration gives a much higher current gain than each transistor taken separately.NPN is one of the two types of bipolar transistors, consisting of a layer of P-doped semiconductor (the "base") between two N-doped layers.技术规格产品宽度2.66mm产品长度7.74mm产品高度11.04mm供应商封装TO-225安装通孔引脚数目3 发射极基极电压5V工作温度150°C连续直流集电极电流4A集电极发射极发射器电压80V集电极基极电压80V集电极截止电流100μA最小工作温度-55°C每芯片单元数目1类型NPN配置单路单价(不含税) 个数量单价13.37102.77502.71002.662502.64
PNP 功率,5 至 25A 系列概览dzsc/18/8494/18849457.jpgdzsc/18/8494/18849457.jpgPNP 功率A Transistor is a semiconductor device used to amplify and switch electronic signals and power. Bipolar (Junction) Transistor (BJT) is a three-terminal electronic device constructed of doped semiconductor material.PNP is one of the two types of bipolar transistors, consisting of a layer of N-doped semiconductor (the "base") between two P-doped layers.技术规格产品宽度4.82mm产品长度10.28mm产品高度9.28mm供应商封装TO-220AB安装通孔引脚数目3 发射极基极电压5V工作温度150°C操作频率40MHz直流集电极电流10A集电极发射极发射器电压80V最小工作温度-55°C每芯片单元数目1类别双极功率类型PNP配置单路单价(不含税) 个数量单价16.84105.81