供应 场效应管 SI2308DS,SI2310,Si2308
| 价 格： | 面议 | |
| 型号/规格： | SI2308DS | |
| 品牌/商标： | 国产 | |
| 封装形式： | SOT-23 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 贴片式 | |
| 包装方式： | 3000/盘 |
产品型号:SI2308DS
封装:SOT-23
源漏极间雪崩电压V(br)dss(V):60
夹断电压VGS(V):±20
漏极电流Id(A):2
源漏极导通电阻rDS(on)(Ω):0.16 @VGS = 10 V
开启电压VGS(TH)(V):3
功率PD(W):1.25
输入电容Ciss(PF):240 typ.
通道极性:N沟道
低频跨导gFS(s)：4.6
单脉冲雪崩能量EAS(mJ):
导通延迟时间Td(on)(ns):7 typ.
上升时间Tr(ns):10 typ.
关断延迟时间Td(off)(ns):17 typ.
下降时间Tf(ns):6 typ.
温度(℃): -55 ~150
描述:60V,2A N-沟道增强型场效应晶体管
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 方小姐/陈小姐/刘小姐/钟小姐
- 电话：0755-82814431/82814432
- 传真：0755-83957820
- 手机：15914096884
- QQ ：
供应 场效应管 AO3434,AO3434A,AO3438
信息内容：AO3434(带二极静电保护） N-Channel Enhancement Mode Field Effect Transistor General Description The AO3434 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. It is ESD protected.Standard Product AO3434 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS(V) = 30V ID = 4.2A (VGS= 10V) RDS(ON) < 52m Ω (VGS = 10V) RDS(ON) < 75mΩ (VGS= 4.5V) AO3438 N-Channel Enhancement Mode Field Effect TransistorFeatures VDS= 20V ID = 3A (VGS= 4.5V) RDS(ON) < 62mΩ (VGS = 4.5V) RDS(ON) < 70mΩ (VGS= 2.5V) RDS(ON) < 85mΩ (VGS= 1.8V)
供应 场效应管 AO3422,AO3460,3422,3460
信息内容：AO3422 N-Channel Enhancement Mode Field Effect Transistor Features VDS(V) = 55V ID= 2.1A (VGS = 4.5V) RDS(ON) < 160m Ω (VGS= 4.5V) RDS(ON) < 200m Ω (VGS= 2.5V) AO3460（带二极静电保护) N-Channel Enhancement Mode Field Effect Transistor General Description The AO3460/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected. AO3460 and AO3460L are electrically identical. -RoHS Compliant -AO3460L is Halogen Free Features VDS (V) = 60V ID = 0.65A (VGS = 10V) RDS(ON) < 1.7Ω (VGS = 10V) RDS(ON) < 2 Ω (VGS = 4.5V)
