供应 场效应管 AO3434,AO3434A,AO3438
| 价 格： | 面议 | |
| 型号/规格： | AO3434A,AO3438 | |
| 品牌/商标： | AO | |
| 封装形式： | SOT-23 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 贴片式 | |
| 包装方式： | 3000/盘 |
AO3434(带二极静电保护）
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3434 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. It is ESD protected.Standard Product AO3434 is Pb-free (meets ROHS & Sony 259 specifications).
VDS(V) = 30V
ID = 4.2A (VGS= 10V)
RDS(ON) < 52m Ω (VGS = 10V)
RDS(ON) < 75mΩ (VGS= 4.5V)
AO3438
N-Channel Enhancement Mode Field Effect TransistorFeatures
VDS= 20V
ID = 3A (VGS= 4.5V)
RDS(ON) < 62mΩ (VGS = 4.5V)
RDS(ON) < 70mΩ (VGS= 2.5V)
RDS(ON) < 85mΩ (VGS= 1.8V)
- 所属城市：广东 深圳
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供应 场效应管 AO3422,AO3460,3422,3460
信息内容：AO3422 N-Channel Enhancement Mode Field Effect Transistor Features VDS(V) = 55V ID= 2.1A (VGS = 4.5V) RDS(ON) < 160m Ω (VGS= 4.5V) RDS(ON) < 200m Ω (VGS= 2.5V) AO3460（带二极静电保护) N-Channel Enhancement Mode Field Effect Transistor General Description The AO3460/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected. AO3460 and AO3460L are electrically identical. -RoHS Compliant -AO3460L is Halogen Free Features VDS (V) = 60V ID = 0.65A (VGS = 10V) RDS(ON) < 1.7Ω (VGS = 10V) RDS(ON) < 2 Ω (VGS = 4.5V)
供应 场效应管 AO3421,AO3435,3421,3435
信息内容：AO3421 P-Channel Enhancement Mode Field Effect Transistor Features VDS(V) = -30V ID = -2.6 A (VGS= -10V) RDS(ON) < 130mΩ (VGS = -10V) RDS(ON) < 200m Ω (VGS= -4.5V) AO3435 P-Channel Enhancement Mode Field Effect TransistorFeatures VDS = -20V ID= -3.5A (VGS= -4.5V) RDS(ON) < 70mΩ (VGS=- 4.5V) RDS(ON) < 90mΩ (VGS = -2.5V) RDS(ON) < 110m Ω (VGS = -1.8V) RDS(ON) < 130m Ω (VGS = -1.5V)
