价 格: | 面议 | |
型号/规格: | SI2307DS | |
品牌/商标: | 国产 | |
封装形式: | SOT-23 | |
环保类别: | 无铅环保型 | |
安装方式: | 贴片式 | |
包装方式: | 3000/盘 |
深圳市金城微现货供应 SI2300,SI2301,SI2302,SI2303,SI2306,si2307,SI2314,AO3400,AO3401....等SOT-23系列产品,价格优惠,质量保证!
产品型号:SI2307DS
封装:SOT-23
源漏极间雪崩电压V(br)dss(V):-30
夹断电压VGS(V):±20
漏极电流Id(A):-3A
源漏极导通电阻rDS(on)(Ω):0.08 @VGS = 10 V
开启电压VGS(TH)(V):-1
功率PD(W):1.25
输入电容Ciss(PF):565 typ.
通道极性:p沟道
导通延迟时间Td(on)(ns):10 typ.
上升时间Tr(ns):9 typ.
关断延迟时间Td(off)(ns):27 typ.
下降时间Tf(ns):7 typ.
温度(℃): -55 ~150
描述:-30V,-3A P-沟道增强型场效应晶体管
AO3413 P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -20V ID= -3 A RDS(ON) < 97m Ω (VGS= -4.5V) RDS(ON) < 130m Ω (VGS= -2.5V) RDS(ON) < 190m Ω (VGS= -1.8V) AO3419, AO3419L ( Green Product ) 带二极管静电保护 P-Channel Enhancement Mode Field Effect Transistor. It is ESD protected. AO3419L ( Green Product ) is offered in a lead-free package. Features VDS(V) = -20V ID= -3.5 A RDS(ON) < 75mΩ (VGS= -10V) RDS(ON) < 95mΩ (VGS= -4.5V) RDS(ON) < 145m Ω (VGS= -2.5V) ESD Rating: 2000V HBM
AO3404 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. Standard Product AO3404 is Pb-free (meets ROHS & Sony 259 specifications). AO3404L is a Green Product ordering option. AO3404 and AO3404L are electrically identica Features VDS (V) = 30V ID = 5.8A (VGS=10V) RDS(ON) < 28m Ω (VGS= 10V) RDS(ON) < 43mΩ (VGS= 4.5V) AO3410 N-Channel Enhancement Mode Field Effect Transistor Features VDS(V) = 30V ID= 5.8 A RDS(ON) < 28m Ω (VGS= 10V) RDS(ON) < 33mΩ (VGS= 4.5V) RDS(ON) < 52mΩ (VGS= 2.5V) RDS(ON) < 70mΩ (VGS= 1.8V) dzsc/18/8341/18834127.jpg