供应 场效应管 AO3413,AO3419,3413,3419
| 价 格： | 面议 | |
| 型号/规格： | AO3413 | |
| 品牌/商标： | AO | |
| 封装形式： | SOT-23 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 贴片式 | |
| 包装方式： | 3000/盘 |
AO3413
P-Channel Enhancement Mode Field Effect Transistor
VDS (V) = -20V
ID= -3 A
RDS(ON) < 97m Ω (VGS= -4.5V)
RDS(ON) < 130m Ω (VGS= -2.5V)
RDS(ON) < 190m Ω (VGS= -1.8V)
AO3419, AO3419L ( Green Product ) 带二极管静电保护
P-Channel Enhancement Mode Field Effect Transistor.
It is ESD protected. AO3419L ( Green Product ) is offered in a lead-free package.
FeaturesVDS(V) = -20V
ID= -3.5 A
RDS(ON) < 75mΩ (VGS= -10V)
RDS(ON) < 95mΩ (VGS= -4.5V)
RDS(ON) < 145m Ω (VGS= -2.5V)
ESD Rating: 2000V HBM
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供应 场效应管 AO3404,AO3410,3404,3410
信息内容：AO3404 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. Standard Product AO3404 is Pb-free (meets ROHS & Sony 259 specifications). AO3404L is a Green Product ordering option. AO3404 and AO3404L are electrically identica Features VDS (V) = 30V ID = 5.8A (VGS=10V) RDS(ON) < 28m Ω (VGS= 10V) RDS(ON) < 43mΩ (VGS= 4.5V) AO3410 N-Channel Enhancement Mode Field Effect Transistor Features VDS(V) = 30V ID= 5.8 A RDS(ON) < 28m Ω (VGS= 10V) RDS(ON) < 33mΩ (VGS= 4.5V) RDS(ON) < 52mΩ (VGS= 2.5V) RDS(ON) < 70mΩ (VGS= 1.8V) dzsc/18/8341/18834127.jpg
供应 场效应管 Si2324DS,Si2328DS
信息内容：Si2324DS N-Channel 100 V (D-S) MOSFET 特点 .TrenchFET®功率MOSFET .100％的Rg测试 .100％UIS测试 .材质分类：对于合规的定义，请参阅www.vishay.com/doc?99912 应用 .DC/ DC转换器 .负荷开关 .LED背光液晶电视 Si2328DS N-Channel 100-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available •100 % Rg Tested • TrenchFET® Power MOSFET dzsc/18/8341/18834159.jpgdzsc/18/8341/18834159.jpg
