价 格: | 面议 | |
型号/规格: | BSC020N025SG,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,25V,100A | |
品牌/商标: | INFINEON(英飞凌) | |
封装形式: | QFN-8 5*6/PG-TDSON-8 | |
环保类别: | 无铅环保型 | |
安装方式: | 贴片式 | |
包装方式: | 5000/盘 |
型号:BSC020N025SG | ||||
标记:20N025S | ||||
类型:场效应管 | ||||
通道极性:N通道 | ||||
封装:QFN-8 5*6/PG-TDSON-8 | ||||
Parameter | Symbol | Conditions | Value | Unit |
Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=1mA | 25 | V |
Continuous drain current | ID | VGS=10V,TC=25℃ | 100 | A |
Pulsed drain current | IDM | TC=25℃ | 200 | A |
Avalanche energy, single pulse | EAS | ID=50A, RGS=25Ω | 800 | mJ |
Gate source voltage | VGS | ±20 | V | |
Power dissipation | Ptot | TC=25℃ | 104 | W |
Gate threshold voltage | VGS(th) | VDS=VGS,ID=110µA | 2 | V |
Drain-source on-state resistance | RDS(on) | VGS=10V, ID=50A | 2 | mΩ |
Input capacitance | Ciss | VGS=0V,VDS=15V, f=1MHz | 6230 | PF |
Transconductance | gfs | |VDS|>2|ID|RDS(on)max,ID=50A | 131 | S |
4、Q Q:4006262666
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BSC016N03LSG,QFN-8 5*6/PG-TDSON-8,SMD/MOS,30V,100A,0.0016Ω Parameter Symbol Conditions Value Unit Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=1mA 30 V Continuous drain current ID VGS=10V,TC=25℃ 100 A Pulsed drain current IDM TC=25℃ 400 A Avalanche energy, single pulse EAS ID=50A, RGS=25? 290 mJ Power dissipation Ptot TC=25℃ 125 W ...
产品型号:BSC025N03LSG 封装:QFN-8 5*6/PG-TDSON-8 源漏极间雪崩电压V(br)dss(V):30 夹断电压VGS(V):±20 雪崩能量EAS(mJ):135 漏极电流Id(A):100 源漏极导通电阻rDS(on)(Ω):0.0025 @VGS = 10 V 开启电压VGS(TH)(V):2.2 功率PD(W):83 极间电容Ciss(PF):4600 通道极性:N通道 低频跨导gFS(s):110 温度(℃): -55 ~150 描述:30V,100A N-channel OptiMOS Power-MOSFET Features ? Fast switching MOSFET for SMPS ? Optimized technology for DC/DC converters ? Qualified according to JEDEC for target applications ? N-channel ? Logic level ? Excellent gate charge x RDS(on) product (FOM) ? Very low on-resistance RDS(on) ? Superior thermal resistance ? Avalanche rated ? Pb-free plating; RoHS compliant (产品图片,产品参数,产品PDF等产品相关信息在线了解\查询\下载.)