供应 场效应管 BSC889N03MSG,889N03MS,BSC889N03
| 价 格： | 面议 | |
| 型号/规格： | BSC889N03MSG,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,30V,44A,9.1Ω. | |
| 品牌/商标： | INFINEON（英飞凌） | |
| 封装形式： | QFN-8 5*6/PG-TDSON-8 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 贴片式 | |
| 包装方式： | 5000/盘 |
BSC889N03MSG,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,30V,44A,9.1Ω
| Parameter | Symbol | Conditions | Value | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=1mA | 30 | V |
| Continuous drain current | ID | VGS=10V,TC=25℃ | 44 | A |
| Pulsed drain current | ID,pulse | TC=25℃ | 176 | A |
| Power dissipation | Ptot | TC=25℃ | 28 | W |
| Gate source voltage | VGS | ±20 | V | |
| Gate threshold voltage | VGS(th) | VDS=VGS,ID=250µA | 2 | V |
| Avalanche energy, single pulse | EAS | ID=20A, RGS=25Ω | 10 | mJ |
| Drain-source on-state resistance | RDS(on) | VGS=10V, ID=30A | 9.1 | mΩ |
| Input capacitance | Ciss | VGS=0V,VDS=15V, f=1MHz | 1500 | PF |
| Transconductance | gfs | |VDS|>2|ID|RDS(on)max,ID=30A | 53 | S |
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