供应 场效应管 BSC070N10NS3G,070N10NS,BSC070N10
| 价 格： | 面议 | |
| 型号/规格： | BSC070N10NS3G,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,100V,90A | |
| 品牌/商标： | INFINEON（英飞凌） | |
| 封装形式： | QFN-8 5*6/PG-TDSON-8 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 贴片式 | |
| 包装方式： | 5000/盘 |
| 型 号：BSC070N10NS3G | ||||
| 标 记: 070N10NS | ||||
| 类 型：场效应管 | ||||
| 通道极性: N通道 | ||||
| 封 装：QFN-8 5*6/PG-TDSON-8 | ||||
| 备 注： | ||||
| Parameter | Symbol | Conditions | Value | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=1mA | 100 | V |
| Continuous drain current | ID | VGS=10V,TC=25℃ | 90 | A |
| Pulsed drain current | IDM | TC=25℃ | 360 | A |
| Avalanche energy, single pulse | EAS | ID=50A, RGS=25Ω | 160 | mJ |
| Gate source voltage | VGS | ±20 | V | |
| Power dissipation | Ptot | TC=25℃ | 114 | W |
| Gate threshold voltage | VGS(th) | VDS=VGS,ID=75µA | 3.5 | V |
| Drain-source on-state resistance | RDS(on) | VGS=10V, ID=50A | 7 | mΩ |
| Input capacitance | Ciss | VGS=0V,VDS=30V, f=1MHz | 3000 | PF |
| Transconductance | gfs | |VDS|>2|ID|RDS(on)max,ID=50A | 72 | S |
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供应 场效应管 BSC889N03MSG,889N03MS,BSC889N03
信息内容：BSC889N03MSG,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,30V,44A,9.1Ω Parameter Symbol Conditions Value Unit Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=1mA 30 V Continuous drain current ID VGS=10V,TC=25℃ 44 A Pulsed drain current ID,pulse TC=25℃ 176 A Power dissipation Ptot TC=25℃ 28 W Gate source voltage VGS ±20 V Gate threshold voltage ...
供应 场效应管 BSC884N03MSG,884N03MS,BSC884N03
信息内容：BSC884N03MS G,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,34V,85A,0.0045Ω Parameter Symbol Conditions Value Unit Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=10mA 30 V Continuous drain current ID VGS=10V,TC=25℃ 85 A Pulsed drain current IDM TC=25℃ 340 A Power dissipation Ptot TC=25℃ 50 W Gate source voltage VGS ±20 V Gate threshold voltage VGS(th...
