价 格: | 面议 | |
型号/规格: | BSC110N06NS3G,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,60V ,50A,0.011Ω | |
品牌/商标: | INFINEON(英飞凌) | |
封装形式: | QFN-8 5*6/PG-TDSON-8 | |
环保类别: | 无铅环保型 | |
安装方式: | 贴片式 | |
包装方式: | 5000/盘 |
型 号:BSC110N06NS3G | ||||
标 记: 110N06NS | ||||
类 型:场效应管 | ||||
通道极性:N通道 | ||||
封 装:QFN-8 5*6/PG-TDSON-8 | ||||
备 注: | ||||
Parameter | Symbol | Conditions | Value | Unit |
Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=1mA | 60 | V |
Continuous drain current | ID | VGS=10V,TC=25℃ | 50 | A |
Pulsed drain current | IDM | TC=25℃ | 200 | A |
Avalanche energy, single pulse | EAS | ID=50A, RGS=25Ω | 22 | mJ |
Gate source voltage | VGS | ±20 | V | |
Power dissipation | Ptot | TC=25℃ | 50 | W |
Gate threshold voltage | VGS(th) | VDS=VGS,ID=23µA | 4 | V |
Drain-source on-state resistance | RDS(on) | VGS=10V, ID=50A | 11 | mΩ |
Input capacitance | Ciss | VGS=0V,VDS=30V, f=1MHz | 2000 | PF |
Transconductance | gfs | |VDS|>2|ID|RDS(on)max,ID=50A | 50 | S |
型 号:BSC100N10NSFG 标 记: 100N10NS 类 型:场效应管 通道极性:N通道 封 装:QFN-8 5*6/PG-TDSON-8 备 注: Parameter Symbol Conditions Value Unit Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=1mA 100 V Continuous drain current ID VGS=10V,TC=25℃ 90 A Pulsed drain current IDM TC=25℃ 360 A Avalanche energy, single pulse EAS ID=50A, RGS=25? 377 mJ Gate source voltage VGS ±20 V Power dissipation Ptot TC=25℃ 156 W Gate threshold voltage VGS(th) VDS=VGS,ID=110µA 4 V Drain-source on-state resistance RDS(on) VGS=10V, ID=25A 10 m? Input capacitance Ciss VGS=0V,VDS=37.5V, f=1MHz 2200 PF Transconductance gfs |VDS|>2|ID|RDS(on)max,ID=50A 61 S
产品型号:BSC020N03MSG 封装:QFN-8 5*6/PG-TDSON-8 源漏极间雪崩电压V(br)dss(V):30 夹断电压VGS(V):±20 雪崩能量EAS(mJ):200 漏极电流Id(A):100 源漏极导通电阻rDS(on)(Ω):0.002 @VGS = 10 V 开启电压VGS(TH)(V):2 功率PD(W):96 极间电容Ciss(PF):7200 通道极性:N通道 低频跨导gFS(s):120 温度(℃): -55 ~150 描述:30V,100A, N-channel OptiMOS Power-MOSFET (产品图片,产品参数,产品PDF等产品相关信息在线了解\查询\下载.)