供应 场效应管 BSC024NE2LS,024NE2LS
| 价 格： | 面议 | |
| 型号/规格： | BSC024NE2LS,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,25V,100A,0.0024Ω | |
| 品牌/商标： | INFINEON（英飞凌） | |
| 封装形式： | QFN-8 5*6/PG-TDSON-8 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 贴片式 | |
| 包装方式： | 5000/盘 |
| 型 号：BSC024NE2LS | ||||
| 标 记:024NE2LS | ||||
| 类 型：场效应管 | ||||
| 通道极性:N通道 | ||||
| 封 装：QFN-8 5*6/PG-TDSON-8 | ||||
| 备 注： | ||||
| Parameter | Symbol | Conditions | Value | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=1mA | 25 | V |
| Continuous drain current | ID | VGS=10V,TC=25℃ | 100 | A |
| Pulsed drain current | IDM | TC=25℃ | 400 | A |
| Avalanche energy, single pulse | EAS | ID=50A, RGS=25Ω | 40 | mJ |
| Gate source voltage | VGS | ±20 | V | |
| Power dissipation | Ptot | TC=25℃ | 48 | W |
| Gate threshold voltage | VGS(th) | VDS=VGS,ID=30µA | 2 | V |
| Drain-source on-state resistance | RDS(on) | VGS=10V, ID=30A | 2.4 | mΩ |
| Input capacitance | Ciss | VGS=0V,VDS=15V, f=1MHz | 1700 | PF |
| Transconductance | gfs | |VDS|>2|ID|RDS(on)max,ID=50A | 110 | S |
- 所属城市：广东 深圳
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- 电话：0755-82814431/82814432
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供应 场效应管 BSC011N03LS,BSC011N03,011N03LS
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供应 场效应管 BSC047N08NS3G,047N08NS,BSC047N08
信息内容：BSC047N08NS3G,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,80V,100A,0.0047Ω Parameter Symbol Conditions Value Unit Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=1mA 80 V Continuous drain current ID VGS=10V,TC=25℃ 100 A Pulsed drain current IDM TC=25℃ 400 A Avalanche energy, single pulse EAS ID=50A, RGS=25Ω 310 mJ Power dissipation Ptot TC=25℃ 125 W Gate source vol...
