供应 场效应管 BSZ123N08NS3G,123N08N,BSZ123N08
| 价 格： | 面议 | |
| 型号/规格： | BSZ123N08NS3G,QFN-8 3.3*3.3/PG-TSDSON-8,SMD/MOS,N场,80V,40A | |
| 品牌/商标： | INFINEON（英飞凌） | |
| 封装形式： | QFN-8 3.3*3.3/PG-TSDSON-8 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 贴片式 | |
| 包装方式： | 5000/盘 | |
| 功率特征： | |
BSZ123N08NS3G,QFN-8 3.3*3.3/PG-TSDSON-8,SMD/MOS,N场,80V,40A,0.0123Ω
| Parameter | Symbol | Conditions | Value | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=1mA | 80 | V |
| Continuous drain current | ID | VGS=10V,TC=25℃ | 40 | A |
| Pulsed drain current | IDM | TC=25℃ | 160 | A |
| Gate source voltage | VGS | ±20 | V | |
| Avalanche energy, single pulse | EAS | ID=20A, RGS=25Ω | 110 | mJ |
| Power dissipation | Ptot | TC=25℃ | 66 | W |
| Gate threshold voltage | VGS(th) | VDS=VGS,ID=33µA | 3.5 | V |
| Drain-source on-state resistance | RDS(on) | VGS=10V, ID=20A | 12.3 | mΩ |
| Transconductance | gfs | |VDS|>2|ID|RDS(on)max,ID=20A | 34 | S |
| Input capacitance | Ciss | VGS=0V,VDS=40V, f=1MHz | 1700 | PF |
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