供应 场效应管 BSC031N06NS3G,031N06NS,BSC031N06
| 价 格： | 面议 | |
| 型号/规格： | BSC031N06NS3G,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,60V ,100A,0.0031Ω | |
| 品牌/商标： | INFINEON（英飞凌） | |
| 封装形式： | QFN-8 5*6/PG-TDSON-8 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 贴片式 | |
| 包装方式： | 5000/盘 | |
| 功率特征： | |
全新!价格优惠!现货供应! 以优势说话!
BSC010NE2LSG,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,25V,100A,0.001Ω
BSC011N03LS,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,30V,100A,0.0011Ω
BSC886N03LSG,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,30V,65A,0.006Ω
BSC027N04LSG,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,40V,100A,0.0027Ω
BSC028N06LS3G,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,60V ,100A,0.0028Ω
BSC020N03LSG,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,30V,100A,0.002Ω
BSC010NE2LSI,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,25V,100A,0.00105Ω
BSC031N06NS3G,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,60V ,100A,0.0031Ω
BSC019N04NSG,infineon,P-TDSON-8,NMOS,40V,100A,0.019Ω
BSC030N04NSG,infineon,P-TDSON-8,NMOS,40V,100A,0.003Ω
BSC035N04LSG,infineon,P-TDSON-8,NMOS,40V,100A,0.0035Ω
BSC054N04NSG,infineon,P-TDSON-8,NMOS,40V,81A,0.0054Ω
BSC059N04LSG,infineon,P-TDSON-8,NMOS,40V,73A,0.0059Ω
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供应 场效应管 BSC0902NS,0902NS
信息内容：型 号：BSC0902NS 标 记: 0902NS 类 型：场效应管 通道极性: N通道 封 装：QFN-8 5*6/PG-TDSON-8 备 注： Parameter Symbol Conditions Value Unit Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=1mA 30 V Continuous drain current ID VGS=10V,TC=25℃ 100 A Pulsed drain current IDM TC=25℃ 400 A Avalanche energy, single pulse EAS ID=40A, RGS=25Ω 40 ...
供应 场效应管 BSC018NE2LS,018NE2LS
信息内容：BSC018NE2LS,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,25V,100A,0.0018Ω Parameter Symbol Conditions Value Unit Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=1mA 25 V Continuous drain current ID VGS=10V,TC=25℃ 100 A Pulsed drain current IDM TC=25℃ 400 A Avalanche energy, single pulse EAS ID=50A, RGS=25Ω 80 mJ Gate source voltage VGS ±20 V Power dissipation ...
