品牌:FAIRCHILD/仙童 | 型号:FQPF4N60C | 种类:绝缘栅(MOSFET) |
沟道类型:N沟道 | 导电方式:增强型 | 用途:SW-REG/开关电源 |
封装外形:P-DIT/塑料双列直插 | 开启电压:`(V) | 夹断电压:600(V) |
极间电容:`(pF) | 低频噪声系数:`(dB) | 漏极电流:`(mA) |
耗散功率:`(mW) |
FQPF4N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply
Features
• 2.6A, 600V, RDS(on) = 2.2Ω @VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 8.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
是否提供加工定制:是品牌:ST,FAIR型号:L7818CV封装:TO-220批号:H08类型:稳压IC POSITIVE VOLTAGE REGULATORS OUTPUT CURRENT TO 1.5AOUTPUT VOLTAGES OF 5; 5.2; 6; 8; 8.5; 9;10; 12; 15; 18; 24VTHERMAL OVERLOAD PROTECTIONSHORT CIRCUIT PROTECTIONOUTPUT TRANSITION SOA PROTECTIONDESCRIPTIONThe L7800 series of three-terminal positiveregulators is available in TO-220, TO-220FP,TO-220FM, TO-3 and D2PAK packages andseveral fixed output voltages, making it useful in awide range of applications. These regulators canprovide local on-card regulation, eliminating thedistribution problems associated with single pointregulation. Each type employs internal currentlimiting, thermal shut-down and safe areaprotection, making it essentially indestructible. Ifadequate heat sinking is provided, they candeliver over 1A output current. Although designedprimarily as fixed voltage regulators, thesedevices can be used with external components toobtain adjustable voltage and currentsPOSITIVE VOLTAGE REGULATORS OU...
是否提供加工定制:是品牌:NEC/日本电气型号:2SC3357应用范围:放大极性:NPN型集电极允许电流ICM:0.1(A) 集电极耗散功率PCM:1(W) 截止频率fT:6.5(MHz) 结构:点接触型封装形式:贴片型封装材料:塑料封装 SILICON TRANSISTOR2SC3357 NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOLD DESCRIPTIONThe 2SC3357 is an NPN silicon epitaxial transistor designed forlow noise amplifier at VHF, UHF and CATV band.It has large dynamic range and good current characteristic FEATURES• Low Noise and High GainNF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,IC = 7 mA, f = 1.0 GHzNF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,IC = 40 mA, f = 1.0 GHz• Large PT in Small PackagePT : 2 W with 16 cm2 ´ 0.7 mm Ceramic Substrate. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)Collector to Base Voltage VCBO 20 VCollector to Emitter Voltage VCEO 12 VEmitter to Base Voltage VEBO 3.0 VCollector Current IC 100 mATotal P...